Follow
Talieh S. Ghiasi
Talieh S. Ghiasi
Verified email at fas.harvard.edu
Title
Cited by
Cited by
Year
Large proximity-induced spin lifetime anisotropy in transition-metal dichalcogenide/graphene heterostructures
TS Ghiasi, J Ingla-Aynés, AA Kaverzin, BJ Van Wees
Nano letters 17 (12), 7528-7532, 2017
1922017
Charge-to-Spin Conversion by the Rashba-Edelstein Effect in 2D van der Waals Heterostructures up to Room Temperature
TS Ghiasi, AA Kaverzin, PJ Blah, BJ van Wees
Nano letters 19 (9), 2019
1912019
Electrical and thermal generation of spin currents by magnetic bilayer graphene
TS Ghiasi, AA Kaverzin, AH Dismukes, DK de Wal, X Roy, BJ van Wees
Nature nanotechnology 16 (7), 788-794, 2021
912021
Symmetry regimes for circular photocurrents in monolayer MoSe2
J Quereda, TS Ghiasi, JS You, J van den Brink, BJ van Wees, ...
Nature communications 9 (1), 3346, 2018
642018
Observation of bright and dark exciton transitions in monolayer MoSe2 by photocurrent spectroscopy
J Quereda, TS Ghiasi, FA Van Zwol, CH Van der Wal, BJ Van Wees
2D Materials 5 (1), 015004, 2017
292017
Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors
TS Ghiasi, J Quereda, BJ van Wees
2D Materials 6 (1), 015002, 2018
242018
Organic solar cell based on photosystem I pigment-protein complex, fabrication and optimization
A Zeynali, TS Ghiasi, G Riazi, R Ajeian
Organic Electronics 51, 341-348, 2017
242017
The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors
J Quereda, J Hidding, TS Ghiasi, BJ van Wees, CH van der Wal, ...
npj 2D Materials and Applications 5 (1), 13, 2021
112021
Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors
J Quereda, TS Ghiasi, CH Van der Wal, BJ Van Wees
2D Materials 6 (2), 025040, 2019
112019
Spin injection by spin–charge coupling in proximity induced magnetic graphene
AA Kaverzin, TS Ghiasi, AH Dismukes, X Roy, BJ Van Wees
2D Materials 9 (4), 045003, 2022
102022
Specular electron focusing between gate-defined quantum point contacts in bilayer graphene
J Ingla-Aynés, ALR Manesco, TS Ghiasi, S Volosheniuk, K Watanabe, ...
Nano Letters 23 (12), 2023
52023
A ballistic electron source with magnetically-controlled valley polarization in bilayer graphene
J Ingla-Aynés, ALR Manesco, TS Ghiasi, K Watanabe, T Taniguchi, ...
arXiv preprint arXiv:2310.15293, 2023
22023
MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons
D Bouwmeester, TS Ghiasi, G Borin Barin, K Müllen, P Ruffieux, R Fasel, ...
ACS applied nano materials 6 (15), 13935-13944, 2023
12023
Towards fully two-dimensional spintronic devices
AA Kaverzin, TS Ghiasi, AH Dismukes, X Roy, BJ van Wees
arXiv preprint arXiv:2202.09972, 2022
12022
Quantum Anomalous Hall and Spin Hall Effects in Magnetic Graphene
TS Ghiasi, D Petrosyan, J Ingla-Aynés, T Bras, S Mañas-Valero, ...
arXiv preprint arXiv:2312.07515, 2023
2023
Charge Transfer and Asymmetric Coupling of MoSe2 Valleys to the Magnetic Order of CrSBr
C Serati de Brito, PE Faria Junior, TS Ghiasi, J Ingla-Aynés, CR Rabahi, ...
Nano Letters 23 (23), 11073–11081, 2023
2023
Nitrogen-vacancy magnetometry of CrSBr by diamond membrane transfer
TS Ghiasi, M Borst, S Kurdi, BG Simon, I Bertelli, C Boix-Constant, ...
npj 2D Materials and Applications 7 (62), 2023
2023
Electron-jet collimation by electrostatically defined quantum point contacts in bilayer graphene
J Ingla-Aynés, T Ghiasi, A Manesco, H van der Zant
APS March Meeting Abstracts 2023, B20. 011, 2023
2023
Spin-polarized conductivity and spin-dependent Seebeck effect in magnetized graphene
T Ghiasi, A Kaverzin, A Dismukes, D de Wal, X Roy, B Van Wees
APS March Meeting Abstracts 2021, M36. 001, 2021
2021
Schakelen met elektronspin dankzij tweedimensionale materialen
TS Ghiasi, B van Wees
Nederlands Tijdschrift voor Natuurkunde 84 (8), 14-18, 2018
2018
The system can't perform the operation now. Try again later.
Articles 1–20