Jo Shien Ng

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JPR DavidUniversity of SheffieldVerified email at sheffield.ac.uk
Chee Hing TanThe University Of SheffieldVerified email at sheffield.ac.uk
Mark HopkinsonUniversity of SheffieldVerified email at sheffield.ac.uk
Andrey KrysaSenior Research Fellow, University of SheffieldVerified email at sheffield.ac.uk
Stephen J SweeneyProfessor of Photonics and Nanotechnology, James Watt School of Engineering, University of GlasgowVerified email at glasgow.ac.uk
Huiyun LiuProfessor of Semiconductor Photonics, University College LondonVerified email at ucl.ac.uk
Abdul Rahman MohmadInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan MalaysiaVerified email at ukm.edu.my
Xiao MengLumentumVerified email at lumentum.com
Kristian GroomSenior Lecturer, The University of SheffieldVerified email at sheffield.ac.uk
Gerald BullerHeriot-Watt UniversityVerified email at hw.ac.uk
Robert D RichardsResearch Fellow, University of SheffieldVerified email at sheffield.ac.uk
Majeed M. HayatProfessor and Department Chair, Electrical & Computer Engineering, Marquette UniversityVerified email at marquette.edu
Pin Jern KerProfessor, School of Engineering & Technology, Sunway UniversityVerified email at sunway.edu.my
Duu-Sheng Ong 王笃生Multimedia University, University Malaya, University of Sheffield, Technical University of DarmstadtVerified email at mmu.edu.my
Nurul Fadzlin HasbullahVerified email at iium.edu.my
niccolò CalandriPolitecnico di MilanoVerified email at polimi.it
Jon WillmottProfessor of Metrology, University of SheffieldVerified email at sheffield.ac.uk
Georges El-HowayekUniversity of New MexicoVerified email at ece.unm.edu
Archie HolmesProfessor and Executive Vice Chancellor for Academic AffairsVerified email at utsystem.edu
shiyu xieCardiff University

Jo Shien Ng

Professor of Semiconductor Devices, University of Sheffield

Verified email at sheffield.ac.uk - Homepage

semiconductor photodiodes avalanche breakdown


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Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ... Applied Physics Letters 85 (5), 704-706, 2004	339	2004
Design and performance of an InGaAs-InP single-photon avalanche diode detector S Pellegrini, RE Warburton, LJJ Tan, JS Ng, AB Krysa, K Groom, ... IEEE journal of quantum electronics 42 (4), 397-403, 2006	180	2006
Room-temperature 1.6 μm light emission from InAs∕ GaAs quantum dots with a thin GaAsSb cap layer HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, F Suarez, ... Journal of applied physics 99 (4), 2006	129	2006
Impact ionization coefficients in 4H-SiC WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ... IEEE Transactions on electron devices 55 (8), 1984-1990, 2008	106	2008
Excess avalanche noise in In0. 52Al0. 48As YL Goh, ARJ MARSHALL, DJ Massey, JS Ng, CH Tan, M Hopkinson IEEE journal of quantum electronics 43 (5-6), 503-507, 2007	104	2007
Localization effects and band gap of GaAsBi alloys AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ... physica status solidi (b) 251 (6), 1276-1281, 2014	103	2014
Temperature dependence of avalanche breakdown in InP and InAlAs LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010	98	2010
The effect of Bi composition to the optical quality of GaAs1− xBix AR Mohmad, F Bastiman, CJ Hunter, JS Ng, SJ Sweeney, JPR David Applied Physics Letters 99 (4), 2011	86	2011
Avalanche noise characteristics in submicron InP diodes LJJ Tan, JS Ng, CH Tan, JPR David IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008	83	2008
Avalanche multiplication in InAlAs YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ... IEEE Transactions on Electron Devices 54 (1), 11-16, 2006	81	2006
Effects of rapid thermal annealing on GaAs1-xBix alloys AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ... Applied Physics Letters 101 (1), 2012	76	2012
Absorption Characteristics ofDiodes in the Near-Infrared CJ Hunter, F Bastiman, AR Mohmad, R Richards, JS Ng, SJ Sweeney, ... IEEE Photonics Technology Letters 24 (23), 2191-2194, 2012	72	2012
Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth F Bastiman, ARB Mohmad, JS Ng, JPR David, SJ Sweeney Journal of crystal growth 338 (1), 57-61, 2012	66	2012
Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As JS Ng, CH Tan, JPR David, G Hill, GJ Rees IEEE Transactions on Electron Devices 50 (4), 901-905, 2003	64	2003
Effect of dead space on avalanche speed [APDs] JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ... IEEE Transactions on Electron Devices 49 (4), 544-549, 2002	58	2002
Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga (In) NAs barrier and space layer HY Liu, M Hopkinson, P Navaretti, M Gutierrez, JS Ng, JPR David Applied physics letters 83 (24), 4951-4953, 2003	54	2003
InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product S Xie, X Zhou, S Zhang, DJ Thomson, X Chen, GT Reed, JS Ng, CH Tan Optics express 24 (21), 24242-24247, 2016	50	2016
Temperature dependence of AlGaAs soft X-ray detectors AM Barnett, DJ Bassford, JE Lees, JS Ng, CH Tan, JPR David Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010	47	2010
Photoluminescence investigation of high quality GaAs1− xBix on GaAs AR Mohmad, F Bastiman, JS Ng, SJ Sweeney, JPR David Applied Physics Letters 98 (12), 2011	44	2011
1300 nm wavelength InAs quantum dot photodetector grown on silicon I Sandall, JS Ng, JPR David, CH Tan, T Wang, H Liu Optics express 20 (10), 10446-10452, 2012	42	2012

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