Tokuyuki TERAJI
Tokuyuki TERAJI
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TitleCited byYear
Indistinguishable photons from separated silicon-vacancy centers in diamond
A Sipahigil, KD Jahnke, LJ Rogers, T Teraji, J Isoya, AS Zibrov, F Jelezko, ...
Physical review letters 113 (11), 113602, 2014
Phosphorus-doped chemical vapor deposition of diamond
S Koizumi, T Teraji, H Kanda
Diamond and Related Materials 9 (3-6), 935-940, 2000
Multiple intrinsically identical single-photon emitters in the solid state
LJ Rogers, KD Jahnke, T Teraji, L Marseglia, C Müller, B Naydenov, ...
Nature communications 5 (1), 1-6, 2014
All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond
LJ Rogers, KD Jahnke, MH Metsch, A Sipahigil, JM Binder, T Teraji, ...
Physical review letters 113 (26), 263602, 2014
Detecting and polarizing nuclear spins with double resonance on a single electron spin
P London, J Scheuer, JM Cai, I Schwarz, A Retzker, MB Plenio, M Katagiri, ...
Physical review letters 111 (6), 067601, 2013
Experimental implementation of assisted quantum adiabatic passage in a single spin
J Zhang, JH Shim, I Niemeyer, T Taniguchi, T Teraji, H Abe, S Onoda, ...
Physical review letters 110 (24), 240501, 2013
Electronic structure of the negatively charged silicon-vacancy center in diamond
LJ Rogers, KD Jahnke, MW Doherty, A Dietrich, LP McGuinness, C Müller, ...
Physical Review B 89 (23), 235101, 2014
Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces
J Michl, T Teraji, S Zaiser, I Jakobi, G Waldherr, F Dolde, P Neumann, ...
Applied Physics Letters 104 (10), 102407, 2014
Extending spin coherence times of diamond qubits by high-temperature annealing
T Yamamoto, T Umeda, K Watanabe, S Onoda, ML Markham, ...
Physical Review B 88 (7), 075206, 2013
Extreme dielectric strength in boron doped homoepitaxial diamond
PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, Y Koide, F Jomard, ...
Applied Physics Letters 97 (22), 223501, 2010
Hall hole mobility in boron-doped homoepitaxial diamond
J Pernot, PN Volpe, F Omnès, P Muret, V Mortet, K Haenen, T Teraji
Physical Review B 81 (20), 205203, 2010
Electronic states of boron and phosphorus in diamond
E Gheeraert, S Koizumi, T Teraji, H Kanda, M Nesladek
physica status solidi (a) 174 (1), 39-51, 1999
Appearance of n-type semiconducting properties of cBN single crystals grown at high pressure
T Taniguchi, T Teraji, S Koizumi, K Watanabe, S Yamaoka
Japanese journal of applied physics 41 (2A), L109, 2002
Growth of high-quality homoepitaxial CVD diamond films at high growth rate
T Teraji, S Mitani, C Wang, T Ito
Journal of crystal growth 235 (1-4), 287-292, 2002
Electronic transitions of electrons bound to phosphorus donors in diamond
E Gheeraert, S Koizumi, T Teraji, H Kanda
Solid state communications 113 (10), 577-580, 2000
Homoepitaxial diamond growth by high-power microwave-plasma chemical vapor deposition
T Teraji, T Ito
Journal of crystal growth 271 (3-4), 409-419, 2004
Chemical vapor deposition of homoepitaxial diamond films
T Teraji
physica status solidi (a) 203 (13), 3324-3357, 2006
Highly efficient doping of boron into high-quality homoepitaxial diamond films
T Teraji, H Wada, M Yamamoto, K Arima, T Ito
Diamond and Related Materials 15 (4-8), 602-606, 2006
Low-temperature spectroscopic study of n-type diamond
M Nesládek, K Meykens, K Haenen, LM Stals, T Teraji, S Koizumi
Physical Review B 59 (23), 14852, 1999
Ideal Ohmic contact to -type 6H-SiC by reduction of Schottky barrier height
T Teraji, S Hara, H Okushi, K Kajimura
Applied physics letters 71 (5), 689-691, 1997
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