Gaudenzio Meneghesso

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Enrico ZanoniProfessor, Electronics, University of PadovaAdresse e-mail validée de dei.unipd.it
Matteo MeneghiniFull Professor at the University of PadovaAdresse e-mail validée de dei.unipd.it
Carlo De SantiAssociate professor, UNIPDAdresse e-mail validée de unipd.it
Matteo BuffoloPostdoctoral researcher, University of PadovaAdresse e-mail validée de dei.unipd.it
Nicola TrivellinAssistant professor at University of PadovaAdresse e-mail validée de unipd.it
Alessandro ChiniProfessor of Electronics, University of Modena and Reggio Emilia, ItalyAdresse e-mail validée de unimore.it
Fabiana RampazzoUniversity of PadovaAdresse e-mail validée de dei.unipd.it
Giovanni VerzellesiProfessor of Electronics, University of Modena and Reggio Emilia, ItalyAdresse e-mail validée de unimore.it
Davide BisiRenesas ElectronicsAdresse e-mail validée de renesas.com
Marco BarbatoUniversity of PadovaAdresse e-mail validée de dei.unipd.it
Andrea CesterDepartment of Information Engineering, Padova UniversityAdresse e-mail validée de dei.unipd.it
Alessandro CariaPostdoc reseracher, Department of Information Engineering, University of PadovaAdresse e-mail validée de unipd.it
Giovanna MuraDIEE- University of Cagliari- ItalyAdresse e-mail validée de diee.unica.it
Francesco PivaPost Doc researcher University of PadovaAdresse e-mail validée de unipd.it
Farid MedjdoubIEMN - CNRSAdresse e-mail validée de iemn.fr
Lorenzo TrevisanelloTridonicAdresse e-mail validée de tridonic.com
Denis MarconimecAdresse e-mail validée de imec.be
Maura PavesiDept. of Marhematical, Physical and Computer Sciences - Univ.of Parma ITALYAdresse e-mail validée de unipr.it
Michele GoanoProfessor of Electronics, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniAdresse e-mail validée de polito.it
Francesco BertazziAssistant Professor, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniAdresse e-mail validée de polito.it

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Gaudenzio Meneghesso

University of Padova, Dept. of Information Engineering

Adresse e-mail validée de dei.unipd.it - Page d'accueil

GaN- SiC- Based Power Devices Optoelectronics (LED & Laser) Photovoltaics MEMS Electrostatic Discharge


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018	1262	2018
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008	808	2008
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 2013	491	2013
GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 2021	467	2021
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ... IEEE Transactions on electron devices 60 (10), 3166-3175, 2013	447	2013
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ... IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004	422	2004
A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni IEEE Transactions on Electron Devices 57 (1), 108-118, 2009	339	2009
A review on the reliability of GaN-based LEDs M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008	325	2008
Power GaN devices: Materials, applications and reliability M Meneghini, G Meneghesso, E Zanoni Springer., 2017	247	2017
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006	230	2006
Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008	218	2008
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ... IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014	199	2014
Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ... IEEE transactions on electron devices 58 (9), 2996-3003, 2011	189	2011
Technology and reliability of normally-off GaN HEMTs with p-type gate M Meneghini, O Hilt, J Wuerfl, G Meneghesso Energies 10 (2), 153, 2017	183	2017
AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013	177	2013
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn Journal of Applied Physics 106 (11), 2009	171	2009
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs M Faqir, G Verzellesi, G Meneghesso, E Zanoni, F Fantini IEEE Transactions on Electron Devices 55 (7), 1592-1602, 2008	166	2008
Time-dependent failure of GaN-on-Si power HEMTs with p-GaN gate I Rossetto, M Meneghini, O Hilt, E Bahat-Treidel, C De Santi, S Dalcanale, ... IEEE Transactions on Electron Devices 63 (6), 2334-2339, 2016	162	2016
Reliability and parasitic issues in GaN-based power HEMTs: A review G Meneghesso, M Meneghini, I Rossetto, D Bisi, S Stoffels, M Van Hove, ... Semiconductor Science and Technology 31 (9), 093004, 2016	161	2016
Breakdown mechanisms in AlGaN/GaN HEMTs: an overview G Meneghesso, M Meneghini, E Zanoni Japanese Journal of Applied Physics 53 (10), 100211, 2014	161	2014

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