| Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices LF Register, E Rosenbaum, K Yang Applied physics letters 74 (3), 457-459, 1999 | 314 | 1999 |
| Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device SK Banerjee, LF Register, E Tutuc, D Reddy, AH MacDonald IEEE Electron Device Letters 30 (2), 158-160, 2008 | 296 | 2008 |
| Mechanism of stress-induced leakage current in MOS capacitors E Rosenbaum, LF Register IEEE Transactions on Electron Devices 44 (2), 317-323, 1997 | 247 | 1997 |
| Graphene field-effect transistors D Reddy, LF Register, GD Carpenter, SK Banerjee Journal of Physics D: Applied Physics 44 (31), 313001, 2011 | 241 | 2011 |
| Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015 | 222 | 2015 |
| Gate-tunable resonant tunneling in double bilayer graphene heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ... Nano letters 15 (1), 428-433, 2015 | 192 | 2015 |
| Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors D Basu, MJ Gilbert, LF Register, SK Banerjee, AH MacDonald Applied Physics Letters 92 (4), 2008 | 152 | 2008 |
| Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene- Heterostructures GW Burg, N Prasad, K Kim, T Taniguchi, K Watanabe, AH MacDonald, ... Physical review letters 120 (17), 177702, 2018 | 133 | 2018 |
| Graphene for CMOS and beyond CMOS applications SK Banerjee, LF Register, E Tutuc, D Basu, S Kim, D Reddy, ... Proceedings of the IEEE 98 (12), 2032-2046, 2010 | 120 | 2010 |
| Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 115 (8), 2014 | 102 | 2014 |
| Atomistic simulation of the electronic states of adatoms in monolayer MoS2 J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee Applied physics letters 104 (14), 2014 | 87 | 2014 |
| Trap-assisted tunneling current through ultra-thin oxide J Wu, LF Register, E Rosenbaum 1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999 | 80 | 1999 |
| Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs S Mudanai, LF Register, AF Tasch, SK Banerjee IEEE Electron Device Letters 22 (3), 145-147, 2001 | 79 | 2001 |
| Microscopic basis for a sum rule for polar-optical-phonon scattering of carriers in heterostructures LF Register Physical Review B 45 (15), 8756, 1992 | 70 | 1992 |
| Atomistic full-band simulations of monolayer MoS2 transistors J Chang, LF Register, SK Banerjee Applied Physics Letters 103 (22), 2013 | 69 | 2013 |
| Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ... IEEE Electron Device Letters 36 (4), 405-407, 2015 | 66 | 2015 |
| Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability Q Ouyang, XD Chen, S Mudanai, DL Kencke, X Wang, AF Tasch, ... 2000 International Conference on Simulation Semiconductor Processes and …, 2000 | 66 | 2000 |
| Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime K Hess, LF Register, B Tuttle, J Lyding, IC Kizilyalli Physica E: Low-dimensional Systems and Nanostructures 3 (1-3), 1-7, 1998 | 66 | 1998 |
| Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ... Nano letters 17 (6), 3919-3925, 2017 | 65 | 2017 |
| Theory of channel hot-carrier degradation in MOSFETs K Hess, LF Register, W McMahon, B Tuttle, O Aktas, U Ravaioli, ... Physica B: Condensed Matter 272 (1-4), 527-531, 1999 | 64 | 1999 |
