Layi Alatise
Layi Alatise
Professor of Power Electronics, University of Warwick
Verified email at warwick.ac.uk - Homepage
Title
Cited by
Cited by
Year
Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules
S Jahdi, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 63 (2), 849-863, 2015
932015
LowStress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling
W Lai, M Chen, L Ran, O Alatise, S Xu, P Mawby
IEEE Transactions on Power Electronics 31 (9), 6575-6585, 2015
742015
Experimental investigation on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module
W Lai, M Chen, L Ran, S Xu, N Jiang, X Wang, O Alatise, P Mawby
IEEE Transactions on Power Electronics 32 (2), 1431-1441, 2016
682016
An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation
S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ...
IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014
672014
Failure and reliability analysis of a SiC power module based on stress comparison to a Si device
B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai, B Gao, O Alatise, H Lu, ...
IEEE Transactions on Device and Materials Reliability 17 (4), 727-737, 2017
662017
An investigation of temperature-sensitive electrical parameters for SiC power MOSFETs
JO Gonzalez, O Alatise, J Hu, L Ran, PA Mawby
IEEE Transactions on Power Electronics 32 (10), 7954-7966, 2016
612016
The impact of parasitic inductance on the performance of silicon–carbide Schottky barrier diodes
O Alatise, NA Parker-Allotey, D Hamilton, P Mawby
IEEE Transactions on Power Electronics 27 (8), 3826-3833, 2012
612012
The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching
J Hu, O Alatise, JAO González, R Bonyadi, L Ran, PA Mawby
IEEE Transactions on Power Electronics 31 (6), 4526-4535, 2015
572015
An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains
S Jahdi, O Alatise, C Fisher, L Ran, P Mawby
IEEE Journal of emerging and selected topics in Power Electronics 2 (3), 517-528, 2014
572014
The impact of temperature and switching rate on the dynamic characteristics of silicon carbide Schottky barrier diodes and MOSFETs
S Jahdi, O Alatise, P Alexakis, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 62 (1), 163-171, 2014
502014
Capacitor selection for modular multilevel converter
Y Tang, L Ran, O Alatise, P Mawby
IEEE Transactions on Industry Applications 52 (4), 3279-3293, 2016
492016
Robustness and balancing of parallel-connected power devices: SiC versus CoolMOS
J Hu, O Alatise, JAO Gonzalez, R Bonyadi, P Alexakis, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 63 (4), 2092-2102, 2015
492015
Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs
P Alexakis, O Alatise, J Hu, S Jahdi, L Ran, PA Mawby
IEEE Transactions on Electron Devices 61 (7), 2278-2286, 2014
482014
A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets
JAO Gonzalez, O Alatise
IEEE Transactions on Power Electronics 34 (6), 5737-5747, 2018
372018
The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs
O Alatise, I Kennedy, G Petkos, K Heppenstall, K Khan, J Parkin, A Koh, ...
IEEE Transactions on electron devices 57 (7), 1651-1658, 2010
312010
A model assisted testing scheme for modular multilevel converter
Y Tang, L Ran, O Alatise, P Mawby
IEEE Transactions on Power Electronics 31 (1), 165-176, 2015
282015
Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs
R Bonyadi, O Alatise, S Jahdi, J Hu, JAO Gonzalez, L Ran, PA Mawby
IEEE Transactions on Power Electronics 30 (12), 6978-6992, 2015
282015
Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs
JO Gonzalez, R Wu, S Jahdi, O Alatise
IEEE Transactions on Industrial Electronics 67 (9), 7375-7385, 2019
272019
Accurate analytical modeling for switching energy of PiN diodes reverse recovery
S Jahdi, O Alatise, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 62 (3), 1461-1470, 2014
262014
Study on the lifetime characteristics of power modules under power cycling conditions
W Lai, M Chen, L Ran, S Xu, H Qin, O Alatise, PA Mawby
IET Power Electronics 9 (5), 1045-1052, 2016
242016
The system can't perform the operation now. Try again later.
Articles 1–20