| Failure and reliability analysis of a SiC power module based on stress comparison to a Si device B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai, B Gao, O Alatise, H Lu, ... IEEE Transactions on device and materials reliability 17 (4), 727-737, 2017 | 157 | 2017 |
| Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules S Jahdi, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby IEEE Transactions on Industrial Electronics 63 (2), 849-863, 2015 | 151 | 2015 |
| Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs JO Gonzalez, R Wu, S Jahdi, O Alatise IEEE Transactions on Industrial Electronics 67 (9), 7375-7385, 2019 | 150 | 2019 |
| LowStress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling W Lai, M Chen, L Ran, O Alatise, S Xu, P Mawby IEEE Transactions on Power Electronics 31 (9), 6575-6585, 2015 | 139 | 2015 |
| An investigation of temperature-sensitive electrical parameters for SiC power MOSFETs JO Gonzalez, O Alatise, J Hu, L Ran, PA Mawby IEEE Transactions on Power Electronics 32 (10), 7954-7966, 2016 | 117 | 2016 |
| Experimental investigation on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module W Lai, M Chen, L Ran, S Xu, N Jiang, X Wang, O Alatise, P Mawby IEEE Transactions on Power Electronics 32 (2), 1431-1441, 2016 | 108 | 2016 |
| An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ... IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014 | 108 | 2014 |
| Robustness and balancing of parallel-connected power devices: SiC versus CoolMOS J Hu, O Alatise, JAO Gonzalez, R Bonyadi, P Alexakis, L Ran, P Mawby IEEE Transactions on Industrial Electronics 63 (4), 2092-2102, 2015 | 86 | 2015 |
| Capacitor selection for modular multilevel converter Y Tang, L Ran, O Alatise, P Mawby IEEE Transactions on Industry Applications 52 (4), 3279-3293, 2016 | 85 | 2016 |
| The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching J Hu, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, PA Mawby IEEE Transactions on Power Electronics 31 (6), 4526-4535, 2015 | 85 | 2015 |
| An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains S Jahdi, O Alatise, C Fisher, L Ran, P Mawby IEEE Journal of emerging and selected topics in Power Electronics 2 (3), 517-528, 2014 | 82 | 2014 |
| Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs P Alexakis, O Alatise, J Hu, S Jahdi, L Ran, PA Mawby IEEE Transactions on Electron Devices 61 (7), 2278-2286, 2014 | 74 | 2014 |
| A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets JAO Gonzalez, O Alatise IEEE Transactions on Power Electronics 34 (6), 5737-5747, 2018 | 70 | 2018 |
| The impact of parasitic inductance on the performance of silicon–carbide Schottky barrier diodes O Alatise, NA Parker-Allotey, D Hamilton, P Mawby IEEE Transactions on Power Electronics 27 (8), 3826-3833, 2012 | 66 | 2012 |
| The impact of temperature and switching rate on the dynamic characteristics of silicon carbide Schottky barrier diodes and MOSFETs S Jahdi, O Alatise, P Alexakis, L Ran, P Mawby IEEE Transactions on Industrial Electronics 62 (1), 163-171, 2014 | 64 | 2014 |
| Accurate analytical modeling for switching energy of PiN diodes reverse recovery S Jahdi, O Alatise, L Ran, P Mawby IEEE Transactions on Industrial Electronics 62 (3), 1461-1470, 2014 | 43 | 2014 |
| The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs O Alatise, I Kennedy, G Petkos, K Heppenstall, K Khan, J Parkin, A Koh, ... IEEE Transactions on electron devices 57 (7), 1651-1658, 2010 | 43 | 2010 |
| Study on the lifetime characteristics of power modules under power cycling conditions W Lai, M Chen, L Ran, S Xu, H Qin, O Alatise, PA Mawby IET Power Electronics 9 (5), 1045-1052, 2016 | 41 | 2016 |
| A model assisted testing scheme for modular multilevel converter Y Tang, L Ran, O Alatise, P Mawby IEEE Transactions on Power Electronics 31 (1), 165-176, 2015 | 41 | 2015 |
| Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs R Bonyadi, O Alatise, S Jahdi, J Hu, JAO Gonzalez, L Ran, PA Mawby IEEE Transactions on Power Electronics 30 (12), 6978-6992, 2015 | 41 | 2015 |
Jose Ortiz GonzalezUniversity of WarwickVerified email at warwick.ac.uk
