| Reverse graded relaxed buffers for high Ge content SiGe virtual substrates VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley Applied Physics Letters 93 (19), 192103, 2008 | 81 | 2008 |
| Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates VA Shah, A Dobbie, M Myronov, DR Leadley Journal of Applied Physics 107 (6), 064304, 2010 | 80 | 2010 |
| High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate VA Shah, A Dobbie, M Myronov, DR Leadley Solid-State Electronics 62 (1), 189-194, 2011 | 72 | 2011 |
| Ultra-high hole mobility exceeding one million in a strained germanium quantum well A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ... Applied Physics Letters 101 (17), 172108, 2012 | 70 | 2012 |
| Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 223704, 2013 | 68 | 2013 |
| Spin transport in germanium at room temperature C Shen, T Trypiniotis, KY Lee, SN Holmes, R Mansell, M Husain, V Shah, ... Applied Physics Letters 97 (16), 162104, 2010 | 62 | 2010 |
| Characterization and modeling of heterojunction diodes A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ... Journal of applied physics 102 (1), 014505, 2007 | 56 | 2007 |
| Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001) VA Shah, A Dobbie, M Myronov, DR Leadley Thin Solid Films 519 (22), 7911-7917, 2011 | 49 | 2011 |
| An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition M Myronov, C Morrison, J Halpin, S Rhead, C Casteleiro, J Foronda, ... Japanese Journal of Applied Physics 53 (4S), 04EH02, 2014 | 35 | 2014 |
| Analysis of inhomogeneous Ge/SiC heterojunction diodes PM Gammon, A Pérez-Tomás, VA Shah, GJ Roberts, MR Jennings, ... Journal of Applied Physics 106 (9), 093708, 2009 | 29 | 2009 |
| High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC A Pérez-Tomás, MR Jennings, M Davis, V Shah, T Grasby, JA Covington, ... Microelectronics Journal 38 (12), 1233-1237, 2007 | 28 | 2007 |
| High quality strained ge epilayers on a si0. 2ge0. 8/ge/si (100) global strain-tuning platform M Myronov, A Dobbie, VA Shah, XC Liu, VH Nguyen, DR Leadley Electrochemical and Solid State Letters 13 (11), H388, 2010 | 27 | 2010 |
| Strain dependence of electron-phonon energy loss rate in many-valley semiconductors JT Muhonen, MJ Prest, M Prunnila, D Gunnarsson, VA Shah, A Dobbie, ... Applied Physics Letters 98 (18), 182103, 2011 | 21 | 2011 |
| Interface characteristics of and Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition PM Gammon, A Pérez-Tomás, MR Jennings, VA Shah, SA Boden, ... Journal of Applied Physics 107 (12), 124512, 2010 | 19 | 2010 |
| Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration VA Shah, A Dobbie, M Myronov, DR Leadley Thin Solid Films 520 (8), 3227-3231, 2012 | 18 | 2012 |
| Strain enhanced electron cooling in a degenerately doped semiconductor MJ Prest, JT Muhonen, M Prunnila, D Gunnarsson, VA Shah, ... Applied Physics Letters 99 (25), 251908, 2011 | 18 | 2011 |
| Electrical isolation of dislocations in Ge layers on Si (001) substrates through CMOS-compatible suspended structures VA Shah, M Myronov, C Wongwanitwatana, L Bawden, MJ Prest, ... Science and technology of advanced materials 13 (5), 055002, 2012 | 16 | 2012 |
| Interfacial engineering of semiconductor–superconductor junctions for high performance micro-coolers D Gunnarsson, JS Richardson-Bullock, MJ Prest, HQ Nguyen, ... Scientific reports 5 (1), 1-10, 2015 | 14 | 2015 |
| High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry VA Shah, SD Rhead, JE Halpin, O Trushkevych, E Chávez-Ángel, ... Journal of Applied Physics 115 (14), 144307, 2014 | 13 | 2014 |
| A study of temperature-related non-linearity at the metal-silicon interface PM Gammon, E Donchev, A Pérez-Tomás, VA Shah, JS Pang, PK Petrov, ... Journal of Applied Physics 112 (11), 114513, 2012 | 13 | 2012 |
phil mawbyprofessor of power electronics, School of Engineering, university of warwick, UKVerified email at warwick.ac.uk
