Vishal Ajit Shah
Vishal Ajit Shah
Associate Professor, University of Warwick
Verified email at warwick.ac.uk - Homepage
Title
Cited by
Cited by
Year
Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley
Applied Physics Letters 93 (19), 192103, 2008
812008
Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates
VA Shah, A Dobbie, M Myronov, DR Leadley
Journal of Applied Physics 107 (6), 064304, 2010
802010
High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate
VA Shah, A Dobbie, M Myronov, DR Leadley
Solid-State Electronics 62 (1), 189-194, 2011
722011
Ultra-high hole mobility exceeding one million in a strained germanium quantum well
A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ...
Applied Physics Letters 101 (17), 172108, 2012
702012
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 223704, 2013
682013
Spin transport in germanium at room temperature
C Shen, T Trypiniotis, KY Lee, SN Holmes, R Mansell, M Husain, V Shah, ...
Applied Physics Letters 97 (16), 162104, 2010
622010
Characterization and modeling of heterojunction diodes
A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ...
Journal of applied physics 102 (1), 014505, 2007
562007
Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001)
VA Shah, A Dobbie, M Myronov, DR Leadley
Thin Solid Films 519 (22), 7911-7917, 2011
492011
An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
M Myronov, C Morrison, J Halpin, S Rhead, C Casteleiro, J Foronda, ...
Japanese Journal of Applied Physics 53 (4S), 04EH02, 2014
352014
Analysis of inhomogeneous Ge/SiC heterojunction diodes
PM Gammon, A Pérez-Tomás, VA Shah, GJ Roberts, MR Jennings, ...
Journal of Applied Physics 106 (9), 093708, 2009
292009
High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC
A Pérez-Tomás, MR Jennings, M Davis, V Shah, T Grasby, JA Covington, ...
Microelectronics Journal 38 (12), 1233-1237, 2007
282007
High quality strained ge epilayers on a si0. 2ge0. 8/ge/si (100) global strain-tuning platform
M Myronov, A Dobbie, VA Shah, XC Liu, VH Nguyen, DR Leadley
Electrochemical and Solid State Letters 13 (11), H388, 2010
272010
Strain dependence of electron-phonon energy loss rate in many-valley semiconductors
JT Muhonen, MJ Prest, M Prunnila, D Gunnarsson, VA Shah, A Dobbie, ...
Applied Physics Letters 98 (18), 182103, 2011
212011
Interface characteristics of and Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition
PM Gammon, A Pérez-Tomás, MR Jennings, VA Shah, SA Boden, ...
Journal of Applied Physics 107 (12), 124512, 2010
192010
Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration
VA Shah, A Dobbie, M Myronov, DR Leadley
Thin Solid Films 520 (8), 3227-3231, 2012
182012
Strain enhanced electron cooling in a degenerately doped semiconductor
MJ Prest, JT Muhonen, M Prunnila, D Gunnarsson, VA Shah, ...
Applied Physics Letters 99 (25), 251908, 2011
182011
Electrical isolation of dislocations in Ge layers on Si (001) substrates through CMOS-compatible suspended structures
VA Shah, M Myronov, C Wongwanitwatana, L Bawden, MJ Prest, ...
Science and technology of advanced materials 13 (5), 055002, 2012
162012
Interfacial engineering of semiconductor–superconductor junctions for high performance micro-coolers
D Gunnarsson, JS Richardson-Bullock, MJ Prest, HQ Nguyen, ...
Scientific reports 5 (1), 1-10, 2015
142015
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry
VA Shah, SD Rhead, JE Halpin, O Trushkevych, E Chávez-Ángel, ...
Journal of Applied Physics 115 (14), 144307, 2014
132014
A study of temperature-related non-linearity at the metal-silicon interface
PM Gammon, E Donchev, A Pérez-Tomás, VA Shah, JS Pang, PK Petrov, ...
Journal of Applied Physics 112 (11), 114513, 2012
132012
The system can't perform the operation now. Try again later.
Articles 1–20