Hideo Hosono
Hideo Hosono
Tokyo Institute of Technology, National Institute for Materials Science
Verified email at - Homepage
Cited by
Cited by
Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K
Y Kamihara, T Watanabe, M Hirano, H Hosono
Journal of the American Chemical Society 130 (11), 3296-3297, 2008
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono
nature 432 (7016), 488-492, 2004
Amorphous Oxide And Thin Film Transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 10/592,431, 2007
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono
Science 300 (5623), 1269-1272, 2003
P-type electrical conduction in transparent thin films of CuAlO2
H Kawazoe, M Yasukawa, H Hyodo, M Kurita, H Yanagi, H Hosono
Nature 389 (6654), 939-942, 1997
Present status of amorphous In–Ga–Zn–O thin-film transistors
T Kamiya, K Nomura, H Hosono
Science and Technology of Advanced Materials, 2010
Iron-based layered superconductor: LaOFeP
Y Kamihara, H Hiramatsu, M Hirano, R Kawamura, H Yanagi, T Kamiya, ...
Journal of the American Chemical Society 128 (31), 10012-10013, 2006
Superconductivity at 43 K in an iron-based layered compound LaO1-xFxFeAs
H Takahashi, K Igawa, K Arii, Y Kamihara, M Hirano, H Hosono
nature 453 (7193), 376-378, 2008
Amorphous oxide semiconductors for high-performance flexible thin-film transistors
K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono
Japanese journal of applied physics 45 (5S), 4303, 2006
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
H Yabuta, M Sano, K Abe, T Aiba, T Den, H Kumomi, K Nomura, T Kamiya, ...
Applied physics letters 89 (11), 2006
Ammonia synthesis using a stable electride as an electron donor and reversible hydrogen store
M Kitano, Y Inoue, Y Yamazaki, F Hayashi, S Kanbara, S Matsuishi, ...
Nature chemistry 4 (11), 934-940, 2012
Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3
H Ohta, SW Kim, Y Mune, T Mizoguchi, K Nomura, S Ohta, T Nomura, ...
Nature materials 6 (2), 129-134, 2007
Transparent conducting oxides for photovoltaics
E Fortunato, D Ginley, H Hosono, DC Paine
MRS bulletin 32 (3), 242-247, 2007
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
H Hosono
Journal of non-crystalline solids 352 (9-20), 851-858, 2006
Material characteristics and applications of transparent amorphous oxide semiconductors
T Kamiya, H Hosono
NPG Asia Materials 2 (1), 15-22, 2010
Deep-ultraviolet transparent conductive thin films
M Orita, H Ohta, M Hirano, H Hosono
Applied Physics Letters 77 (25), 4166-4168, 2000
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3 (ZnO) 5 films
K Nomura, T Kamiya, H Ohta, K Ueda, M Hirano, H Hosono
Applied Physics Letters 85 (11), 1993-1995, 2004
Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent 7,601,984, 2009
Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping
T Kamiya, K Nomura, H Hosono
Journal of display Technology 5 (7), 273-288, 2009
Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples
H Hosono, N Kikuchi, N Ueda, H Kawazoe
Journal of Non-Crystalline Solids 198, 165-169, 1996
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