David Mora-Fonz
Cited by
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Why are polar surfaces of ZnO stable?
D Mora-Fonz, T Lazauskas, MR Farrow, CRA Catlow, SM Woodley, ...
Chemistry of Materials 29 (12), 5306-5320, 2017
The nature of the molybdenum surface in iron molybdate. The active phase in selective methanol oxidation
C Brookes, PP Wells, N Dimitratos, W Jones, EK Gibson, DJ Morgan, ...
The Journal of Physical Chemistry C 118 (45), 26155-26161, 2014
Defect formation in In 2 O 3 and SnO 2: A new atomistic approach based on accurate lattice energies
Q Hou, J Buckeridge, T Lazauskas, D Mora-Fonz, AA Sokol, SM Woodley, ...
Journal of Materials Chemistry C 6 (45), 12386-12395, 2018
Morphological features and band bending at nonpolar surfaces of ZnO
D Mora-Fonz, J Buckeridge, AJ Logsdail, DO Scanlon, AA Sokol, ...
The Journal of Physical Chemistry C 119 (21), 11598-11611, 2015
Development of interatomic potentials for supported nanoparticles: the Cu/ZnO case
D Mora-Fonz, T Lazauskas, SM Woodley, ST Bromley, CRA Catlow, ...
The Journal of Physical Chemistry C 121 (31), 16831-16844, 2017
Structural, energetic and electronic properties of (100) surfaces for alkaline earth metal oxides as calculated with hybrid density functional theory
AJ Logsdail, D Mora-Fonz, DO Scanlon, CRA Catlow, AA Sokol
Surface Science 642, 58-65, 2015
Making amorphous ZnO: Theoretical predictions of its structure and stability
D Mora-Fonz, AL Shluger
Physical Review B 99 (1), 014202, 2019
Thermodynamically accessible titanium clusters Ti N, N= 2–32
T Lazauskas, AA Sokol, J Buckeridge, CRA Catlow, SGET Escher, ...
Physical Chemistry Chemical Physics 20 (20), 13962-13973, 2018
Modeling of intrinsic electron and hole trapping in crystalline and amorphous ZnO
D Mora‐Fonz, AL Shluger
Advanced Electronic Materials 6 (1), 1900760, 2020
Disorder-induced electron and hole trapping in amorphous
D Mora-Fonz, M Kaviani, AL Shluger
Physical Review B 102 (5), 054205, 2020
Morphology of Cu clusters supported on reconstructed polar ZnO (0001) and (0001 [combining macron]) surfaces
MD Higham, D Mora-Fonz, AA Sokol, SM Woodley, CRA Catlow
Journal of Materials Chemistry A 8 (43), 22840-22857, 2020
Heterostructures of GaN with SiC and ZnO enhance carrier stability and separation in framework semiconductors
MR Farrow, J Buckeridge, T Lazauskas, D Mora‐Fonz, DO Scanlon, ...
physica status solidi (a) 214 (4), 1600440, 2017
Real and Virtual Polymorphism of Titanium Selenide with Robust Interatomic Potentials
D Mora-Fonz, JC Schön, J Prehl, SM Woodley, CRA Catlow, A Shluger, ...
Journal of Materials Chemistry A 8 (28), 14054-14061, 2020
Inverse Perovskite Oxysilicides and Oxygermanides as Candidates for Nontoxic Infrared Semiconductor and Their Chemical Bonding Nature
N Ohashi, D Mora-Fonz, S Otani, T Ohgaki, M Miyakawa, A Shluger
Inorganic Chemistry 59 (24), 18305-18313, 2020
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