Friedhelm Bechstedt
Friedhelm Bechstedt
Professor für Festkörpertheorie, Friedrich Schiller Universität Jena
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TitleCited byYear
Linear optical properties in the projector-augmented wave methodology
M Gajdoš, K Hummer, G Kresse, J Furthmüller, F Bechstedt
Physical Review B 73 (4), 045112, 2006
Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
physica status solidi (b) 229 (3), r1-r3, 2002
Semiempirical van der Waals correction to the density functional description of solids and molecular structures
F Ortmann, F Bechstedt, WG Schmidt
Physical Review B 73 (20), 205101, 2006
Quasiparticle band structure based on a generalized Kohn-Sham scheme
F Fuchs, J Furthmüller, F Bechstedt, M Shishkin, G Kresse
Physical Review B 76 (11), 115109, 2007
Properties of strained wurtzite GaN and AlN: Ab initio studies
JM Wagner, F Bechstedt
Physical Review B 66 (11), 115202, 2002
Band Gap of InN and In‐Rich InxGa1—xN alloys (0.36 < x < 1)
VY Davydov, AA Klochikhin, VV Emtsev, SV Ivanov, VV Vekshin, ...
physica status solidi (b) 230 (2), R4-R6, 2002
Band gap of hexagonal InN and InGaN alloys
VY Davydov, AA Klochikhin, VV Emtsev, DA Kurdyukov, SV Ivanov, ...
physica status solidi (b) 234 (3), 787-795, 2002
First-principles study of ground- and excited-state properties of , , and polymorphs
A Schleife, F Fuchs, J Furthmüller, F Bechstedt
Physical Review B 73 (24), 245212, 2006
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral
PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ...
Physical Review B 79 (20), 205211, 2009
Absolute surface energies of group-IV semiconductors: dependence on orientation and reconstruction
AA Stekolnikov, J Furthmüller, F Bechstedt
Physical Review B 65 (11), 115318, 2002
Principles of surface physics
F Bechstedt
Springer Science & Business Media, 2012
Attracted by long-range electron correlation: adenine on graphite
F Ortmann, WG Schmidt, F Bechstedt
Physical review letters 95 (18), 186101, 2005
Polytypism and properties of silicon carbide
F Bechstedt, P Käckell, A Zywietz, K Karch, B Adolph, K Tenelsen, ...
physica status solidi (b) 202 (1), 35-62, 1997
Semiconductor surfaces and interfaces: their atomic and electronic structures
F Bechstedt, R Enderlein
Akademie-Verlag, 1988
Optical properties of semiconductors using projector-augmented waves
B Adolph, J Furthmüller, F Bechstedt
Physical Review B 63 (12), 125108, 2001
Ab initio lattice dynamics of BN and AlN: Covalent versus ionic forces
K Karch, F Bechstedt
Physical Review B 56 (12), 7404, 1997
Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure
A Zywietz, J Furthmüller, F Bechstedt
Physical Review B 59 (23), 15166, 1999
Quasiparticle band structures of the antiferromagnetic transition-metal oxides MnO, FeO, CoO, and NiO
C Rödl, F Fuchs, J Furthmüller, F Bechstedt
Physical Review B 79 (23), 235114, 2009
Origin of electron accumulation at wurtzite InN surfaces
I Mahboob, TD Veal, LFJ Piper, CF McConville, H Lu, WJ Schaff, ...
Physical Review B 69 (20), 201307, 2004
Direct band gap wurtzite gallium phosphide nanowires
S Assali, I Zardo, S Plissard, D Kriegner, MA Verheijen, G Bauer, ...
Nano letters 13 (4), 1559-1563, 2013
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