Han Wang
TitleCited byYear
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
F Xia, H Wang, Y Jia
Nature Communications 5, 4458, doi:10.1038/ncomms5458., 2014
20852014
Two-Dimensional Material Nanophotonics
F Xia, H Wang, D Xiao, M Dubey, A Ramasubramaniam
Nature Photonics 8 (12), 899-907, 2014
13802014
Integrated Circuits Based on Bilayer MoS2 Transistors
H Wang, L Yu, YH Lee, Y Shi, A Hsu, ML Chin, LJ Li, M Dubey, J Kong, ...
Nano letters 12 (9), 4674-4680, 2012
13612012
Highly anisotropic and robust excitons in monolayer black phosphorus
X Wang, AM Jones, KL Seyler, V Tran, Y Jia, H Zhao, H Wang, L Yang, ...
Nature Nanotechnology 10, 517-521, 2015
7962015
The renaissance of black phosphorus
X Ling, H Wang, S Huang, F Xia, MS Dresselhaus
Proceedings of the National Academy of Sciences 112 (15), 4523-4530, 2015
7372015
Synthesis and Transfer of Single Layer Transition Metal Disulfides on Diverse Surfaces
YH Lee, L Yu, H Wang, wenjing Fang, X Ling, Y Shi, T Lin, JK Huang, ...
Nano Letters 13 (4), 1852–1857, 2013
5282013
Tunable optical properties of multilayer black phosphorus thin films
T Low, AS Rodin, A Carvalho, Y Jiang, H Wang, F Xia, AHC Neto
Physical Review B 90 (7), 075434, 2014
4552014
Graphene-MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics
L Yu, YH Lee, X Ling, EJG Santos, YC Shin, Y Lin, M Dubey, E Kaxiras, ...
Nano letters 14 (6), 3055–3063, 2014
4252014
Graphene frequency multipliers
H Wang, D Nezich, J Kong, T Palacios
Electron Device Letters, IEEE 30 (5), 547-549, 2009
3652009
Plasmons and screening in monolayer and multilayer black phosphorus
T Low, R Roldán, H Wang, F Xia, P Avouris, LM Moreno, F Guinea
Phys. Rev. Lett. 113, 106802, 2014
3402014
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
W Zhu, T Low, YH Lee, H Wang, DB Farmer, J Kong, F Xia, P Avouris
Nature Communications, 5, 3087, doi:10.1038/ncomms4087, 2014
3382014
Black Phosphorus Radio-Frequency Transistors
H Wang, X Wang, F Xia, L Wang, H Jiang, Q Xia, ML Chin, M Dubey, ...
Nano Letters 14 (11), 6424-6429, 2014
2772014
Black Phosphorus Mid-Infrared Photodetectors with High Gain
Q Guo, A Pospischil, M Bhuiyan, H Jiang, H Tian, D Farmer, B Deng, C Li, ...
Nano Lett. 16 (7), 4648–4655, 2016
2742016
Graphene-based ambipolar RF mixers
H Wang, A Hsu, J Wu, J Kong, T Palacios
Electron Device Letters, IEEE 31 (9), 906-908, 2010
2632010
BN/Graphene/BN Transistors for RF Applications
H Wang, T Taychatanapat, A Hsu, K Watanabe, T Taniguchi, ...
Electron Device Letters, IEEE 32 (9), 1209-1211, 2011
1972011
Black arsenic–phosphorus: layered anisotropic infrared semiconductors with highly tunable compositions and properties
B Liu, M Köpf, AN Abbas, X Wang, Q Guo, Y Jia, F Xia, R Weihrich, ...
Advanced Materials 27 (30), 4423-4429, 2015
1892015
Applications of graphene devices in RF communications
T Palacios, A Hsu, H Wang
Communications Magazine, IEEE 48 (6), 122-128, 2010
1562010
245-GHz InAlN/GaN HEMTs with oxygen plasma treatment
DS Lee, JW Chung, H Wang, X Gao, S Guo, P Fay, T Palacios
Electron Device Letters, IEEE 32 (6), 755-757, 2011
1532011
Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance
A Hsu, H Wang, KK Kim, J Kong, T Palacios
Electron Device Letters, IEEE 32 (8), 1008-1010, 2011
1522011
Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide
H Zhao, J Wu, H Zhong, Q Guo, X Wang, F Xia, L Yang, PH Tan, H Wang
Nano Research, 8, 11, pp. 3651-3661, 2015. DOI 10.1007/s12274-015-0865-0, 2015
1152015
The system can't perform the operation now. Try again later.
Articles 1–20