| 205-GHz (Al, In) N/GaN HEMTs H Sun, AR Alt, H Benedickter, E Feltin, JF Carlin, M Gonschorek, ... IEEE electron device letters 31 (9), 957-959, 2010 | 214 | 2010 |
| 102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz H Sun, AR Alt, H Benedickter, CR Bolognesi, E Feltin, JFÇ Carlin, ... IEEE electron device letters 30 (8), 796-798, 2009 | 97 | 2009 |
| Fully Passivated AlInN/GaN HEMTs With of 205/220 GHz S Tirelli, D Marti, H Sun, AR Alt, JF Carlin, N Grandjean, CR Bolognesi IEEE electron device letters 32 (10), 1364-1366, 2011 | 92 | 2011 |
| 107-GHz (Al, Ga) N/GaN HEMTs on silicon with improved maximum oscillation frequencies S Tirelli, D Marti, H Sun, AR Alt, H Benedickter, EL Piner, CR Bolognesi IEEE Electron Device Letters 31 (4), 296-298, 2010 | 67 | 2010 |
| High-Performance 0.1- Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz H Sun, AR Alt, H Benedickter, CR Bolognesi IEEE Electron Device Letters 30 (2), 107-109, 2008 | 67 | 2008 |
| 100-nm-gate (Al, In) N/GaN HEMTs grown on SiC with FT= 144 GHz HF Sun, AR Alt, H Benedickter, E Feltin, JF Carlin, M Gonschorek, ... IEEE electron device letters 31 (4), 293-295, 2010 | 63 | 2010 |
| Ultrahigh-speed AlInN/GaN high electron mobility transistors grown on (111) high-resistivity silicon with FT= 143 GHz H Sun, AR Alt, H Benedickter, CR Bolognesi, E Feltin, JF Carlin, ... Applied physics express 3 (9), 094101, 2010 | 62 | 2010 |
| III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same L Yuan, PGQ Lo, H Sun, KB Lee, W Wang, SL Selvaraj US Patent App. 14/389,043, 2015 | 51 | 2015 |
| Anomalous behavior of AlGaN∕ GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling HF Sun, CR Bolognesi Applied Physics Letters 90 (12), 2007 | 47 | 2007 |
| 100 nm gate AlGaN/GaN HEMTs on silicon with fT= 90 GHz HF Sun, AR Alt, H Benedickter, CR Bolognesi Electronics letters 45 (7), 376-377, 2009 | 34 | 2009 |
| Nanometric AlGaN/GaN HEMT performance with implant or mesa isolation H Sun, AR Alt, S Tirelli, D Marti, H Benedickter, E Piner, CR Bolognesi IEEE electron device letters 32 (8), 1056-1058, 2011 | 28 | 2011 |
| Ozone passivation of slow transient current collapse in AlGaN∕ GaN field-effect transistors: The role of threading dislocations and the passivation mechanism DW DiSanto, HF Sun, CR Bolognesi Applied physics letters 88 (1), 2006 | 28 | 2006 |
| Low-Noise Microwave Performance of 0.1 m Gate AlInN/GaN HEMTs on SiC H Sun, AR Alt, H Benedickter, E Feltin, JF Carlin, M Gonschorek, ... IEEE microwave and wireless components letters 20 (8), 453-455, 2010 | 20 | 2010 |
| Submicrometer copper T-gate AlGaN/GaN HFETs: the gate metal stack effect HF Sun, AR Alt, CR Bolognesi IEEE electron device letters 28 (5), 350-353, 2007 | 16 | 2007 |
| 全耗尽 CMOS/SOI 工艺 刘新宇， 孙海峰， 刘洪民， 陈焕章， 扈焕章， 海潮和， 和致经， 吴德馨 半导体学报: 英文版 24 (1), 104-108, 2003 | 13 | 2003 |
| High‐speed and low‐noise AlInN/GaN HEMTs on SiC H Sun, AR Alt, H Benedickter, E Feltin, JF Carlin, M Gonschorek, ... physica status solidi (a) 208 (2), 429-433, 2011 | 11 | 2011 |
| Small-signal microwave performance comparison of deep submicron AlGaN/GaN high electron mobility transistors on high-resistivity silicon and insulating substrates H Sun, AR Alt, D Marti, M Vetter, H Benedickter, CR Bolognesi Applied physics express 2 (11), 111002, 2009 | 10 | 2009 |
| Impact of selective Al2O3 passivation on current collapse in AlGaN/GaN HEMTs HF Sun, CR Bolognesi Electronics Letters 43 (23), 1314-1315, 2007 | 9 | 2007 |
| CMOS/SOI64Kb 静态随机存储器 刘新字， 韩郑生， 周小茵， 海潮和， 刘忠立， 吴德馨 半导体学报 22 (1), 2001 | 9 | 2001 |
| Theoretical study of short channel effect in highly scaled GaN HEMTs H Sun, KB Lee, L Yuan, W Wang, SL Selvaraj, GQ Lo 2012 IEEE International Symposium on Radio-Frequency Integration Technology …, 2012 | 6 | 2012 |
Prof. Dr. Colombo BolognesiETH Zurich, Chair, Millimeter-Wave ElectronicsVerified email at mwe.ee.ethz.ch
