Jose Ortiz Gonzalez
Title
Cited by
Cited by
Year
Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules
S Jahdi, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 63 (2), 849-863, 2015
932015
An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation
S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ...
IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014
672014
Failure and reliability analysis of a SiC power module based on stress comparison to a Si device
B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai, B Gao, O Alatise, H Lu, ...
IEEE Transactions on Device and Materials Reliability 17 (4), 727-737, 2017
662017
An investigation of temperature-sensitive electrical parameters for SiC power MOSFETs
JO Gonzalez, O Alatise, J Hu, L Ran, PA Mawby
IEEE Transactions on Power Electronics 32 (10), 7954-7966, 2016
612016
The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching
J Hu, O Alatise, JAO GonzŠlez, R Bonyadi, L Ran, PA Mawby
IEEE Transactions on Power Electronics 31 (6), 4526-4535, 2015
572015
Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS
J Hu, O Alatise, JAO Gonzalez, R Bonyadi, P Alexakis, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 63 (4), 2092-2102, 2016
492016
A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets
JAO Gonzalez, O Alatise
IEEE Transactions on Power Electronics 34 (6), 5737-5747, 2018
372018
Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs
R Bonyadi, O Alatise, S Jahdi, J Hu, JAO Gonzalez, L Ran, PA Mawby
IEEE Transactions on Power Electronics 30 (12), 6978-6992, 2015
282015
Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs
JO Gonzalez, R Wu, S Jahdi, O Alatise
IEEE Transactions on Industrial Electronics 67 (9), 7375-7385, 2019
272019
Temperature sensitive electrical parameters for condition monitoring in SiC power MOSFETs
JO Gonzalez, O Alatise, J Hu, L Ran, P Mawby
IET Digital Library, 2016
212016
Impact of the gate oxide reliability of SiC MOSFETs on the junction temperature estimation using temperature sensitive electrical parameters
JO Gonzalez, O Alatise
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 837-844, 2018
152018
Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation
S Jahdi, O Alatise, J Ortiz-Gonzalez, P Gammon, L Ran, P Mawby
2015 17th European Conference on Power Electronics and Applications (EPE'15†…, 2015
152015
Finite element modelling and experimental characterisation of paralleled SiC MOSFET failure under avalanche mode conduction
J Hu, O Alatise, JA Ortiz-Gonzalez, P Alexakis, L Ran, P Mawby
2015 17th European Conference on Power Electronics and Applications (EPE'15†…, 2015
122015
Analysis of power device failure under avalanche mode Conduction
P Alexakis, O Alatise, J Hu, S Jahdi, JO Gonzalez, L Ran, PA Mawby
2015 9th International Conference on Power Electronics and ECCE Asia (ICPE†…, 2015
122015
Bias temperature instability and condition monitoring in SiC power MOSFETs
JO Gonzalez, O Alatise
Microelectronics Reliability 88, 557-562, 2018
112018
Electro-thermo-mechanical modelling and analysis of the press pack diode in power electronics
P Rajaguru, H Lu, C Bailey, J Ortiz-Gonzalez, O Alatise
2015 21st International Workshop on Thermal Investigations of ICs and†…, 2015
102015
Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs
JO Gonzalez, O Alatise
Microelectronics Reliability 76, 470-474, 2017
92017
Evaluation of SiC Schottky diodes using pressure contacts
JO Gonzalez, O Alatise, AM Aliyu, P Rajaguru, A Castellazzi, L Ran, ...
IEEE Transactions on Industrial Electronics 64 (10), 8213-8223, 2017
92017
Challenges of junction temperature sensing in SiC power MOSFETs
JO Gonzalez, O Alatise
2019 10th International Conference on Power Electronics and ECCE Asia (ICPE†…, 2019
82019
An initial consideration of silicon carbide devices in pressure-packages
JAO Gonzalez, O Alatise, L Ran, P Mawby, P Rajaguru, C Bailey
2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2016
82016
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