Justin Brockman
Justin Brockman
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MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique
L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019
Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide
J Brockman, L Gao, B Hughes, CT Rettner, MG Samant, KP Roche, ...
Nature Nanotechnology 9 (6), 453-458, 2014
2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications
JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ...
2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019
Oscillation effects and time variation of the supernova neutrino signal
JP Kneller, GC McLaughlin, J Brockman
Physical Review D—Particles, Fields, Gravitation, and Cosmology 77 (4), 045023, 2008
Substrate-induced disorder in V2O3 thin films grown on annealed c-plane sapphire substrates
J Brockman, MG Samant, KP Roche, SSP Parkin
Applied Physics Letters 101 (5), 2012
Increased metal-insulator transition temperatures in epitaxial thin films of V2O3 prepared in reduced oxygen environments
J Brockman, NP Aetukuri, T Topuria, MG Samant, KP Roche, SSP Parkin
Applied Physics Letters 98 (15), 152105-152105-3, 2011
Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability
MJ Mutch, T Pomorski, BC Bittel, CJ Cochrane, PM Lenahan, X Liu, ...
Microelectronics Reliability 63, 201-213, 2016
Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics
SW King, MM Paquette, JW Otto, AN Caruso, J Brockman, J Bielefeld, ...
Applied Physics Letters 104 (10), 2014
Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper
SW King, M French, G Xu, B French, M Jaehnig, J Bielefeld, J Brockman, ...
Applied surface science 285, 545-551, 2013
Band alignment at molybdenum disulphide/boron nitride/aluminum oxide interfaces
J DiStefano, YC Lin, J Robinson, NR Glavin, AA Voevodin, J Brockman, ...
Journal of Electronic Materials 45, 983-988, 2016
Valence and conduction band offsets at low-k a-SiOxCy: H/a-SiCxNy: H interfaces
SW King, J Brockman, M French, M Jaehnig, M Kuhn, B French
Journal of Applied Physics 116 (11), 2014
Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures
DG Ouellette, CJ Wiegand, MT Rahman, B Maertz, O Golonzka, ...
US Patent 10,868,233, 2020
X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces
D Koh, SK Banerjee, J Brockman, M Kuhn, SW King
Diamond and Related Materials 101, 107647, 2020
PSTTM device with bottom electrode interface material
K Oguz, KP O'brien, CJ Wiegand, MT Rahman, BS Doyle, ML Doczy, ...
US Patent 10,340,445, 2019
PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability
K Oguz, KP O'brien, CJ Wiegand, T Rahman, BS Doyle, ML Doczy, ...
US Patent 10,580,970, 2020
Perpendicular magnetic memory with symmetric fixed layers
CC Kuo, JS Brockman, JGA VINASCO, K Oguz, KP O'brien, BS Doyle, ...
US Patent 10,832,749, 2020
IEEE Int. Electron Devices Meet
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
the press); https://ieee-iedm. org/program, 2018
Electric field-induced conductivity switching in vanadium sesquioxide nanostructures
J Brockman
Stanford University, 2012
M, Mainuddin, M
O Golonzka, J Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
Meterelliyoz, P. Nguyen, D. Nikonov, K. O'brien, JO Donnell, K. Oguz, D …, 0
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