| First-principles study of As interstitials in GaAs: Convergence, relaxation, and formation energy JT Schick, CG Morgan, P Papoulias Physical Review B 66 (19), 195302, 2002 | 68 | 2002 |
| Arsenic interstitials and interstitial complexes in low-temperature grown GaAs JI Landman, CG Morgan, JT Schick, P Papoulias, A Kumar Physical Review B 55 (23), 15581, 1997 | 51 | 1997 |
| Antisite-related defects in GaAs grown at low temperatures JI Landman, CG Morgan, JT Schick Physical review letters 74 (20), 4007, 1995 | 17 | 1995 |
| Classical model of negative thermal expansion in solids with expanding bonds JT Schick, AM Rappe Physical Review B 93 (21), 214304, 2016 | 15 | 2016 |
| Point defects with lattice distortion in CdTe and HgCdTe JT Schick, CG Morgan‐Pond Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (2 …, 1990 | 15 | 1990 |
| Enhanced charge ordering transition in doped CaFeO 3 through steric templating L Jiang, D Saldana-Greco, JT Schick, AM Rappe Physical Review B 89 (23), 235106, 2014 | 14 | 2014 |
| Coupling between octahedral rotations and local polar displacements in WO3/ReO3 superlattices JT Schick, L Jiang, SG Diomedes, AM Rappe Physical Review B 89 (19), 195304, 2014 | 13 | 2014 |
| Interstitial total energies and diffusion barriers in Hg1−xCdxTe CG Morgan‐Pond, JT Schick, S Goettig Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (2 …, 1989 | 10 | 1989 |
| Electronic structures of HgTe and CdTe surfaces and HgTe/CdTe interfaces JT Schick, SM Bose, AB Chen Physical Review B 40 (11), 7825, 1989 | 8 | 1989 |
| Gallium interstitial contributions to diffusion in gallium arsenide JT Schick, CG Morgan AIP Advances 1 (3), 2011 | 7 | 2011 |
| Structural energies of defects in CdTe and HgCdTe JT Schick, CG Morgan-Pond Semiconductor science and technology 5 (3S), S81, 1990 | 6 | 1990 |
| Thermoelectric figure of merit of a material with caged structure and rattler atoms SN Behera, SM Bose, P Entel, JT Schick** Phase Transitions 77 (1-2), 225-240, 2004 | 2 | 2004 |
| Electronic structure of a buried NiSi 2 or CoSi 2 layer in bulk Si JT Schick, SM Bose Physical Review B 53 (19), 12609, 1996 | 2 | 1996 |
| Green's function theory of the surface properties of II-VI compounds JT Schick, SM Bose Progress in surface science 25 (1-4), 107-117, 1987 | 2 | 1987 |
| Descriptors for thermal expansion in solids JT Schick, AM Gopakumar, AM Rappe arXiv preprint arXiv:1701.03966, 2017 | 1 | 2017 |
| Arsenic interstitial pairs in GaAs P Papoulias, CG Morgan, JT Schick, JI Landman, N Rahhal-Orabi Materials Science Forum 258, 923-928, 1997 | 1 | 1997 |
| Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States JI Landman, CG Morgan, JT Schick, A Kumar, P Papoulias, MF Kramer Materials Science Forum 196, 249-254, 1995 | 1 | 1995 |
| Tunneling current through a disordered insulator JT Schick, SM Bose Physical Review B 35 (2), 792, 1987 | 1 | 1987 |
| Mechanical modeling of structures exhibiting negative thermal expansion J Schick, A Rappe Bulletin of the American Physical Society 60, 2015 | | 2015 |
| Strain-coupled octahedral tilts and local polar displacements in superlattices J Schick, L Jiang, D Saldana-Greco, A Rappe APS March Meeting Abstracts 2014, C1. 181, 2014 | | 2014 |
