| A GaN–SiC hybrid material for high-frequency and power electronics JT Chen, J Bergsten, J Lu, E Janzén, M Thorsell, L Hultman, N Rorsman, ... Applied Physics Letters 113 (4), 2018 | 98 | 2018 |
| Dispersive effects in microwave AlGaN/AlN/GaN HEMTs with carbon-doped buffer S Gustafsson, JT Chen, J Bergsten, U Forsberg, M Thorsell, E Janzén, ... IEEE Transactions on Electron Devices 62 (7), 2162-2169, 2015 | 79 | 2015 |
| An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design M Sudow, M Fagerlind, M Thorsell, K Andersson, N Billstrom, PĹ Nilsson, ... IEEE Transactions on Microwave Theory and Techniques 56 (8), 1827-1833, 2008 | 78 | 2008 |
| An inverse class-F GaN HEMT power amplifier with 78% PAE at 3.5 GHz P Saad, HM Nemati, M Thorsell, K Andersson, C Fager 2009 European Microwave Conference (EuMC), 496-499, 2009 | 75 | 2009 |
| Application relevant evaluation of trapping effects in AlGaN/GaN HEMTs with Fe-doped buffer O Axelsson, S Gustafsson, H Hjelmgren, N Rorsman, H Blanck, ... IEEE Transactions on Electron Devices 63 (1), 326-332, 2015 | 74 | 2015 |
| Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers J Bergsten, M Thorsell, D Adolph, JT Chen, O Kordina, ... IEEE Transactions on Electron Devices 65 (6), 2446-2453, 2018 | 72 | 2018 |
| High-efficiency LDMOS power-amplifier design at 1 GHz using an optimized transistor model HM Nemati, C Fager, M Thorsell, H Zirath IEEE Transactions on Microwave Theory and Techniques 57 (7), 1647-1654, 2009 | 63 | 2009 |
| Microwave performance of ‘buffer-free’GaN-on-SiC high electron mobility transistors DY Chen, A Malmros, M Thorsell, H Hjelmgren, O Kordina, JT Chen, ... IEEE Electron Device Letters 41 (6), 828-831, 2020 | 58 | 2020 |
| Thermal study of the high-frequency noise in GaN HEMTs M Thorsell, K Andersson, M Fagerlind, M Sudow, PA Nilsson, N Rorsman IEEE Transactions on Microwave Theory and Techniques 57 (1), 19-26, 2008 | 57 | 2008 |
| An X-band AlGaN/GaN MMIC receiver front-end M Thorsell, M Fagerlind, K Andersson, N Billstrom, N Rorsman IEEE Microwave and Wireless Components Letters 20 (1), 55-57, 2009 | 55 | 2009 |
| Impact of channel thickness on the large-signal performance in InAlGaN/AlN/GaN HEMTs with an AlGaN back barrier A Malmros, P Gamarra, M Thorsell, H Hjelmgren, C Lacam, SL Delage, ... IEEE Transactions on Electron Devices 66 (1), 364-371, 2018 | 49 | 2018 |
| Fast Multiharmonic Active Load–Pull System With Waveform Measurement Capabilities M Thorsell, K Andersson Microwave Theory and Techniques, IEEE Transactions on 60 (1), 149-157, 2012 | 41 | 2012 |
| A Single-Ended Resistive -Band AlGaN/GaN HEMT MMIC Mixer M Sudow, K Andersson, M Fagerlind, M Thorsell, PĹ Nilsson, N Rorsman IEEE transactions on Microwave Theory and Techniques 56 (10), 2201-2206, 2008 | 41 | 2008 |
| Accurate modeling of GaN HEMT RF behavior using an effective trapping potential A Prasad, M Thorsell, H Zirath, C Fager IEEE Transactions on Microwave Theory and Techniques 66 (2), 845-857, 2017 | 35 | 2017 |
| Electrothermal access resistance model for GaN-based HEMTs M Thorsell, K Andersson, H Hjelmgren, N Rorsman IEEE Transactions on Electron Devices 58 (2), 466-472, 2010 | 34 | 2010 |
| Impact of trapping effects on the recovery time of GaN based low noise amplifiers O Axelsson, N Billström, N Rorsman, M Thorsell IEEE Microwave and wireless components letters 26 (1), 31-33, 2015 | 33 | 2015 |
| Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition T Huang, A Malmros, J Bergsten, S Gustafsson, O Axelsson, M Thorsell, ... IEEE Electron Device Letters 36 (6), 537-539, 2015 | 32 | 2015 |
| Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3as Passivation for InAlN/AlN/GaN HEMTs A Malmros, P Gamarra, MA di Forte-Poisson, H Hjelmgren, C Lacam, ... IEEE Electron Device Letters 36 (3), 235-237, 2015 | 26 | 2015 |
| Hybrid measurement-based extraction of consistent large-signal models for microwave FETs I Angelov, M Thorsell, D Kuylenstierna, G Avolio, D Schreurs, A Raffo, ... 2013 European Microwave Conference, 267-270, 2013 | 26 | 2013 |
| Performance enhancement of microwave GaN HEMTs without an AlN-exclusion layer using an optimized AlGaN/GaN interface growth process J Bergsten, JT Chen, S Gustafsson, A Malmros, U Forsberg, M Thorsell, ... IEEE Transactions on electron devices 63 (1), 333-338, 2015 | 25 | 2015 |
Niklas RorsmanResearch Professor, Chalmers University of TechnologyVerified email at chalmers.se
