| Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting CH Yang, A Rossi, R Ruskov, NS Lai, FA Mohiyaddin, S Lee, C Tahan, ... Nature Communications 4, 2069, 2013 | 237 | 2013 |
| An accurate single-electron pump based on a highly tunable silicon quantum dot A Rossi, T Tanttu, KY Tan, I Iisakka, R Zhao, KW Chan, GC Tettamanzi, ... Nano Letters 14 (6), 3405-3411, 2014 | 80 | 2014 |
| Gate-based single-shot readout of spins in silicon A West, B Hensen, A Jouan, T Tanttu, CH Yang, A Rossi, ... Nature nanotechnology 14 (5), 437-441, 2019 | 69 | 2019 |
| Valley splitting of single-electron Si MOS quantum dots JK Gamble, P Harvey-Collard, NT Jacobson, AD Baczewski, E Nielsen, ... Applied Physics Letters 109 (25), 253101, 2016 | 41 | 2016 |
| Radio-frequency capacitive gate-based sensing I Ahmed, JA Haigh, S Schaal, S Barraud, Y Zhu, C Lee, M Amado, ... Physical Review Applied 10 (1), 014018, 2018 | 39 | 2018 |
| Thermal-error regime in high-accuracy gigahertz single-electron pumping R Zhao, A Rossi, SP Giblin, JD Fletcher, FE Hudson, M Möttönen, ... Physical Review Applied 8 (4), 044021, 2017 | 37 | 2017 |
| Orbital and valley state spectra of a few-electron silicon quantum dot CH Yang, WH Lim, NS Lai, A Rossi, A Morello, AS Dzurak Physical Review B 86 (11), 115319, 2012 | 33 | 2012 |
| Charge state hysteresis in semiconductor quantum dots CH Yang, A Rossi, NS Lai, R Leon, WH Lim, AS Dzurak Applied Physics Letters 105 (18), 183505, 2014 | 31 | 2014 |
| A CMOS dynamic random access architecture for radio-frequency readout of quantum devices S Schaal, A Rossi, VN Ciriano-Tejel, TY Yang, S Barraud, JJL Morton, ... Nature Electronics 2 (6), 236-242, 2019 | 24 | 2019 |
| Evidence for universality of tunable-barrier electron pumps SP Giblin, A Fujiwara, G Yamahata, MH Bae, N Kim, A Rossi, M Möttönen, ... Metrologia 56 (4), 044004, 2019 | 21 | 2019 |
| Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor A Rossi, R Zhao, AS Dzurak, MF Gonzalez-Zalba Applied Physics Letters 110 (21), 212101, 2017 | 21 | 2017 |
| Electron temperature in electrically isolated Si double quantum dots A Rossi, T Ferrus, DA Williams Applied Physics Letters 100 (13), 133503, 2012 | 21 | 2012 |
| Silicon metal-oxide-semiconductor quantum dots for single-electron pumping A Rossi, T Tanttu, FE Hudson, Y Sun, M Möttönen, AS Dzurak Journal of visualized experiments: JoVE, 2015 | 18 | 2015 |
| Electron counting in a silicon single-electron pump T Tanttu, A Rossi, KY Tan, KE Huhtinen, KW Chan, M Möttönen, ... New Journal of Physics 17 (10), 103030, 2015 | 15 | 2015 |
| Detection of charge motion in a non-metallic silicon isolated double quantum dot T Ferrus, A Rossi, M Tanner, G Podd, P Chapman, DA Williams New Journal of Physics 13 (10), 103012, 2011 | 14 | 2011 |
| Microwave-assisted transport via localized states in degenerately doped Si single electron transistors A Rossi, DG Hasko Journal of Applied Physics 108 (3), 034509, 2010 | 14 | 2010 |
| Thermal instability in two-finger bipolar transistors N Nenadovic, V d'Alessandro, F Tamigi, A Rossi, A Griffo, LK Nanver, ... ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003 | 14 | 2003 |
| Three-waveform bidirectional pumping of single electrons with a silicon quantum dot T Tanttu, A Rossi, KY Tan, A Mäkinen, KW Chan, AS Dzurak, M Möttönen Scientific reports 6 (1), 1-7, 2016 | 12 | 2016 |
| Coulomb interaction and valley-orbit coupling in Si quantum dots L Jiang, CH Yang, Z Pan, A Rossi, AS Dzurak, D Culcer Physical Review B 88 (8), 085311, 2013 | 12 | 2013 |
| Charge detection in phosphorus-doped silicon double quantum dots A Rossi, T Ferrus, GJ Podd, DA Williams Applied Physics Letters 97 (22), 223506, 2010 | 12 | 2010 |
