| A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films J Baek, D Yin, N Liu, I Omkaram, C Jung, H Im, S Hong, SM Kim, YK Hong, ... Nano Research 10, 1861-1871, 2017 | 127 | 2017 |
| PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices AA AlMutairi, D Yin, Y Yoon IEEE Electron Device Letters 39 (1), 151-154, 2017 | 50 | 2017 |
| Design strategy of two-dimensional material field-effect transistors: Engineering the number of layers in phosphorene FETs D Yin, Y Yoon Journal of Applied Physics 119 (21), 2016 | 41 | 2016 |
| Recent progress in high-mobility thin-film transistors based on multilayer 2D materials YK Hong, N Liu, D Yin, S Hong, DH Kim, S Kim, W Choi, Y Yoon Journal of Physics D: Applied Physics 50 (16), 164001, 2017 | 28 | 2017 |
| Assessment of high-frequency performance limit of black phosphorus field-effect transistors D Yin, AA AlMutairi, Y Yoon IEEE Transactions on Electron Devices 64 (7), 2984-2991, 2017 | 24 | 2017 |
| Scaling limit of bilayer phosphorene FETs D Yin, G Han, Y Yoon IEEE Electron Device Letters 36 (9), 978-980, 2015 | 23 | 2015 |
| Mono-bi-monolayer graphene junction introduced quantum transport channels D Yin, W Liu, X Li, L Geng, X Wang, P Huai Applied Physics Letters 103 (17), 2013 | 20 | 2013 |
| Performance limit projection of germanane field-effect transistors AA AlMutairi, Y Zhao, D Yin, Y Yoon IEEE Electron Device Letters 38 (5), 673-676, 2017 | 14 | 2017 |
| Low-temperature behaviors of multilayer MoS2 transistors with ohmic and Schottky contacts W Choi, D Yin, S Choo, SH Jeong, HJ Kwon, YYS Kim Appl. Phys. Lett. 115 (3), 033501, 2019 | 11 | 2019 |
| Intrinsic performance of germanane Schottky barrier field-effect transistors Y Zhao, D Yin, Y Yoon IEEE Transactions on Electron Devices 65 (10), 4188-4195, 2018 | 5 | 2018 |
| Can bilayer black phosphorus outperform monolayer in field-effect transistors? D Yin, Y Yoon 2015 73rd Annual Device Research Conference (DRC), 177-178, 2015 | 5 | 2015 |
| Assessing the role of a semiconductor’s anisotropic permittivity in hafnium disulfide monolayer field-effect transistors RKA Bennett, D Yin, Y Yoon IEEE Transactions on Electron Devices 67 (6), 2607-2613, 2020 | 4 | 2020 |
| Performance Optimization of Monolayer 1T/1T′-2H MoX₂ Lateral Heterojunction Transistors D Yin, Y Yoon IEEE Transactions on Electron Devices 68 (7), 3649 - 3657, 2021 | 3 | 2021 |
| Black Phosphorus: New Opportunities in Electronic Device Applications D Yin, Y Yoon Electrochemical Society Meeting Abstracts 229, 1307-1307, 2016 | | 2016 |
