Atsufumi Hirohata
Atsufumi Hirohata
Verified email at - Homepage
Cited by
Cited by
Spintronics based random access memory: a review
S Bhatti, R Sbiaa, A Hirohata, H Ohno, S Fukami, SN Piramanayagam
Materials Today 20 (9), 530-548, 2017
Future perspectives for spintronic devices
A Hirohata, K Takanashi
Journal of Physics D: Applied Physics 47 (19), 193001, 2014
Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve
Y Jiang, T Nozaki, S Abe, T Ochiai, A Hirohata, N Tezuka, K Inomata
Nature materials 3 (6), 361-364, 2004
Effective reduction of critical current for current-induced magnetization switching by a Ru layer insertion in an exchange-biased spin valve
Y Jiang, S Abe, T Ochiai, T Nozaki, A Hirohata, N Tezuka, K Inomata
Physical review letters 92 (16), 167204, 2004
Roadmap for emerging materials for spintronic device applications
A Hirohata, H Sukegawa, H Yanagihara, I Žutić, T Seki, S Mizukami, ...
IEEE Transactions on Magnetics 51 (10), 1-11, 2015
Heusler alloys
C Felser, A Hirohata
Springer, 2015
Heusler alloy/semiconductor hybrid structures
A Hirohata, M Kikuchi, N Tezuka, K Inomata, JS Claydon, YB Xu, ...
Current Opinion in Solid State and Materials Science 10 (2), 93-107, 2006
Structural and magnetic properties of epitaxial -structured films grown on GaAs(001) substrates
A Hirohata, H Kurebayashi, S Okamura, M Kikuchi, T Masaki, T Nozaki, ...
Journal of applied physics 97 (10), 103714, 2005
Broadband ferromagnetic resonance of wires using a rectifying effect
A Yamaguchi, K Motoi, A Hirohata, H Miyajima, Y Miyashita, Y Sanada
Physical Review B 78 (10), 104401, 2008
Geometric coercivity scaling in magnetic thin film antidot arrays
I Ruiz-Feal, L Lopez-Diaz, A Hirohata, J Rothman, CM Guertler, ...
Journal of magnetism and magnetic materials 242, 597-600, 2002
Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation
A Hirohata, YB Xu, CM Guertler, JAC Bland, SN Holmes
Physical Review B 63 (10), 104425, 2001
Heusler-alloy films for spintronic devices
A Hirohata, J Sagar, L Lari, LR Fleet, VK Lazarov
Applied Physics A 111 (2), 423-430, 2013
Magnetoresistance in tunnel junctions using full Heusler alloys
K Inomata, N Tezuka, S Okamura, H Kurebayashi, A Hirohata
Journal of applied physics 95 (11), 7234-7236, 2004
Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions
T Nozaki, A Hirohata, N Tezuka, S Sugimoto, K Inomata
Applied Physics Letters 86 (8), 082501, 2005
Magnetoresistance of a domain wall at a submicron junction
YB Xu, CAF Vaz, A Hirohata, HT Leung, CC Yao, JAC Bland, E Cambril, ...
Physical Review B 61 (22), R14901, 2000
Room-temperature structural ordering of a Heusler compound Fe 3 Si
S Yamada, J Sagar, S Honda, L Lari, G Takemoto, H Itoh, A Hirohata, ...
Physical Review B 86 (17), 174406, 2012
Structural and electrical properties of InSe polycrystalline films and diode fabrication
A Hirohata, JS Moodera, GP Berera
Thin Solid Films 510 (1-2), 247-250, 2006
Significant magnetoresistance enhancement due to a cotunneling process in a double tunnel junction with single discontinuous ferromagnetic layer insertion
H Sukegawa, S Nakamura, A Hirohata, N Tezuka, K Inomata
Physical review letters 94 (6), 068304, 2005
Magnetic nanoscale dots on colloid crystal surfaces
SP Li, WS Lew, YB Xu, A Hirohata, A Samad, F Baker, JAC Bland
Applied Physics Letters 76 (6), 748-750, 2000
Ballistic spin filtering across ferromagnet/semiconductor interfaces at room temperature
A Hirohata, SJ Steinmueller, WS Cho, YB Xu, CM Guertler, G Wastlbauer, ...
Physical Review B 66 (3), 035330, 2002
The system can't perform the operation now. Try again later.
Articles 1–20