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Ramya Yeluri
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Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ...
Applied Physics Letters 106 (18), 2015
1122015
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors
D Bisi, SH Chan, X Liu, R Yeluri, S Keller, M Meneghini, G Meneghesso, ...
Applied Physics Letters 108 (11), 2016
572016
Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors
R Yeluri, X Liu, BL Swenson, J Lu, S Keller, UK Mishra
Journal of Applied Physics 114 (8), 2013
522013
Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer
S Chowdhury, R Yeluri, C Hurni, UK Mishra, I Ben-Yaacov
US Patent 8,937,338, 2015
442015
Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition
X Liu, J Kim, R Yeluri, S Lal, H Li, J Lu, S Keller, B Mazumder, JS Speck, ...
Journal of Applied Physics 114 (16), 2013
432013
Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor …
X Liu, R Yeluri, J Lu, UK Mishra
Journal of electronic materials 42, 33-39, 2013
402013
Compact models of spreading resistances for electrical/thermal design of devices and ICs
S Karmalkar, PV Mohan, HP Nair, R Yeluri
IEEE Transactions on Electron Devices 54 (7), 1734-1743, 2007
402007
Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material
R Yeluri, BL Swenson, UK Mishra
Journal of Applied Physics 111 (4), 2012
382012
In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ...
Applied Physics Letters 103 (5), 2013
352013
Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition
T Fujiwara, R Yeluri, D Denninghoff, J Lu, S Keller, JS Speck, ...
Applied physics express 4 (9), 096501, 2011
332011
Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition
J Lu, D Denninghoff, R Yeluri, S Lal, G Gupta, M Laurent, S Keller, ...
Applied Physics Letters 102 (23), 2013
292013
Atom probe tomography studies of Al2O3 gate dielectrics on GaN
B Mazumder, X Liu, R Yeluri, F Wu, UK Mishra, JS Speck
Journal of Applied Physics 116 (13), 2014
212014
In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge
X Liu, J Kim, DJ Suntrup, S Wienecke, M Tahhan, R Yeluri, SH Chan, J Lu, ...
Applied Physics Letters 104 (26), 2014
182014
Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition
X Liu, CM Jackson, F Wu, B Mazumder, R Yeluri, J Kim, S Keller, ...
Journal of Applied Physics 119 (1), 2016
172016
Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN
R Yeluri, X Liu, M Guidry, OS Koksaldi, S Lal, J Kim, J Lu, S Keller, ...
Applied Physics Letters 105 (22), 2014
172014
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN
SH Chan, D Bisi, X Liu, R Yeluri, M Tahhan, S Keller, SP DenBaars, ...
Journal of Applied Physics 122 (17), 2017
72017
Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge
X Liu, UK Mishra, S Keller, J Kim, M Laurent, J Lu, R Yeluri, SH Chan
US Patent 9,281,183, 2016
52016
Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers
R Yeluri, J Lu, D Browne, CA Hurni, S Chowdhury, S Keller, JS Speck, ...
72nd Device Research Conference, 253-254, 2014
32014
Use of Second Harmonic and Thermal Effects of Laser Voltage Probing for Better Fault Isolation
R Yeluri, R Thirugnanasambandam, C Wagner, J Urtecho, JM Neirynck
ISTFA 2016: Proceedings from the 42nd International Symposium for Testing …, 2016
22016
Gallium Nitride Vertical Electron Transistors for High Power Applications
R Yeluri
University of California, Santa Barbara, 2013
22013
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