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S Reza Hosseini
S Reza Hosseini
Assistant Professor, Khoy Branch, Islamic Azad University
Verified email at iaukhoy.ac.ir
Title
Cited by
Cited by
Year
Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)
R Hosseini, M Fathipour, R Faez
Int. J. Phys. Sci 7 (28), 5054-5061, 2012
212012
Simulation Study of Circuit Performance of GAA Silicon Nanowire Transistor and DG MOSFET
R Hosseini, N Teimuorzadeh
Physical Review and Research International 3 (4), 568-576, 2013
142013
A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor
R Hosseini, M Fathipour, R Faez
International Journal of Electronics 99 (9), 1299-1307, 2012
132012
Performance study and analysis of heterojunction gate all around nanowire tunneling field effect transistor
M Roohy, R Hosseini
Journal of Optoelectronical Nanostructures 4 (2), 13-28, 2019
122019
Analysis and Simulation of a Junctionless Double Gate MOSFET for High-speed Applications
R Hosseini
Journal of Korean Physical Society 67 (9), 1615-1618, 2015
102015
A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
R Hosseini, N Teimourzadeh, M Fathipour
Journal of Computational Electronics 13, 170-179, 2014
62014
Uncoupled mode space approach for analysis of nanoscale strained junctionless double-gate MOSFET
R Hosseini
journal of computational electronics, 2016
52016
Tunable far infrared detection using quantum rings-inwell intersubband photodetectors
R Samadzadeh, M Zavvari, R Hosseini
Optical and Quantum Electronics 47 (11), 3555-3565, 2015
52015
ELECTRICAL CHARACTERISTICS OF STRAINED DOUBLE GATE MOSFET
H Valinajad, R Hosseini, ME Akbari
International Journal of Research and Reviews in Applied Sciences 13 (2 …, 2012
52012
A quantum mechanical transport approach to simulation of quadruple gate silicon nanowire transistor
F Karimi, M Fathipour, R Hosseini
Journal of Nanoscience and Nanotechnology 11 (12), 10476-10479, 2011
52011
Introducing a high sensitive Hall effect sensor
R Hosseini, A Kashaninia
World Academy Science, Engineering and Technology 39, 431-434, 2008
42008
Device and Circuit Performance Simulation of a New Nano-Scaled Side Contacted Field Effect Diode Structure
O Talati Khoei, R Hosseini
Journal of Optoelectronical Nanostructures 4 (3), 17-32, 2019
32019
Performance evaluation of source heterojunction strained channel gate all around nanowire transistor
R Hosseini, M Fathipour, R Faez
Modern Physics Letters B 26 (12), 1250076, 2012
32012
Window layer based on ZnO and Ag thin films incorporated in solar cells as a part of hybrid energy-saving system
H Gholamzadeh, R Hosseini, H Veladi, H Rahimi
Optica Applicata 53 (1), 2023
12023
The impact of structural parameters on the electrical characteristics of GAA Silicon nanowire transistor
M Fathipour, F Karimi, R Hosseini
2009 International Semiconductor Device Research Symposium, 1-2, 2009
12009
Amplification of Output Voltage by Using Silicon Based Solar Cells, Piezoelectric and Thermoelectric Conversion Transducers: A Triple Energy Harvester
HR Hadi Golamzadeh, Reza Hosseini, Hadi Veladi
Journal of Optoelectronical Nano Structure 8 (2), 2023
2023
Design and Simulation of a 2GHz, 64×64 bit Arithmetic Logic Unit in 130nm CMOS Technology
RHS Maryam Sistanizadeh
Journal of Iranian Association of Electrical and Electronics Engineers 18 (1 …, 2021
2021
Design and Analysis of a Multi Material Double Gate Junctionless Tunnel Field Effect Transistor
RH Negar Bashiri
Journal of Iranian Association of Electrical and Electronics Engineers 18 (4 …, 2021
2021
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