Follow
In Won Yeu
Title
Cited by
Cited by
Year
Ferroelectric switching in bilayer 3R MoS2 via interlayer shear mode driven by nonlinear phononics
J Park, IW Yeu, G Han, CS Hwang, JH Choi
Scientific reports 9 (1), 14919, 2019
262019
Reduction of the Hysteresis Voltage in Atomic‐Layer‐Deposited p‐Type SnO Thin‐Film Transistors by Adopting an Al2O3 Interfacial Layer
Y Jang*, IW Yeu*, JS Kim, JH Han, JH Choi, CS Hwang
Advanced Electronic Materials 5 (7), 1900371, 2019
252019
Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases
W Lee, S Yoo, KJ Yoon, IW Yeu, HJ Chang, JH Choi, S Hoffmann-Eifert, ...
Scientific reports 6 (1), 20550, 2016
232016
Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics
IW Yeu, G Han, J Park, CS Hwang, JH Choi
Scientific reports 9 (1), 1127, 2019
182019
Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics
IW Yeu, J Park, G Han, CS Hwang, JH Choi
Scientific reports 7 (1), 10691, 2017
172017
Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice
KH Ye, G Han, IW Yeu, CS Hwang, JH Choi
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100009, 2021
152021
Atomistic prediction on the configuration-and temperature-dependent dielectric constant of Be 0.25 Mg 0.75 O superlattice as a high-κ dielectric layer
G Han, IW Yeu, KH Ye, SC Lee, CS Hwang, JH Choi
Journal of Materials Chemistry C 9 (3), 851-859, 2021
92021
An ab initio approach on the asymmetric stacking of GaAs <111> nanowires grown by a vapor–solid method
IW Yeu, G Han, CS Hwang, JH Choi
Nanoscale 12 (34), 17703-17714, 2020
92020
Theoretical understanding of the catalyst-free growth mechanism of GaAs <111> B nanowires
IW Yeu, G Han, J Park, CS Hwang, JH Choi
Applied Surface Science 497, 143740, 2019
82019
Optical control of the layer degree of freedom through Wannier–Stark states in polar 3R MoS2
J Park, IW Yeu, G Han, C Jang, JY Kwak, CS Hwang, JH Choi
Journal of Physics: Condensed Matter 31 (31), 315502, 2019
82019
ænet-PyTorch: a GPU-supported implementation for machine learning atomic potentials training
NA Jon Lopez-Zorrilla, Xabier M Aretxabaleta, In Won Yeu, Inigo Etxebarria ...
J. Chem. Phys. 158 (16), 164105, 2023
72023
The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors
H Seo, IW Yeu, DS Kwon, DG Kim, J Lim, TK Kim, H Paik, JH Choi, ...
Advanced Electronic Materials 8 (7), 2200099, 2022
52022
Effect of local strain energy to predict accurate phase diagram of III–V pseudobinary systems: case of Ga (As, Sb) and (In, Ga) As
G Han, IW Yeu, J Park, KH Ye, SC Lee, CS Hwang, JH Choi
Journal of Physics D: Applied Physics 54 (4), 045104, 2020
52020
Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf1-xZrxO2 by first principle calculations
KH Ye, IW Yeu, G Han, T Jeong, S Yoon, D Kim, CS Hwang, JH Choi
Applied Physics Reviews 10 (3), 2023
42023
Role of the Short‐Range Order in Amorphous Oxide on MoS2/a‐SiO2 and MoS2/a‐HfO2 Interfaces
J Park, IW Yeu, G Han, CS Hwang, JH Choi
physica status solidi (b) 256 (8), 1900002, 2019
42019
Atomistic prediction on the composition-and configuration-dependent bandgap of Ga (As, Sb) using cluster expansion and ab initio thermodynamics
G Han, IW Yeu, KH Ye, CS Hwang, JH Choi
Materials Science and Engineering: B 280, 115713, 2022
32022
Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110)
H Kim, IW Yeu, G Han, G Ju, YJ Lee, Y Shin, JH Choi, HC Koo, H Kim
Journal of Alloys and Compounds 874, 159848, 2021
32021
InterPhon: Ab initio interface phonon calculations within a 3D electronic structure framework
IW Yeu, G Han, KH Ye, CS Hwang, JH Choi
Computer Physics Communications 268, 108089, 2021
22021
Initial oxidation and surface stability diagram of Ge (100) as a function of the temperature and oxygen partial pressure through ab initio thermodynamics
K Liu, IW Yeu, CS Hwang, JH Choi
Physica Scripta 95 (2), 025701, 2019
12019
Study of Charge Transition-Driven Resistive Switching Mechanism in TiO2-based Random Access Memory via Density Functional Theory
T Jeong, IW Yeu, KH Ye, S Yoon, D Kim, CS Hwang, JH Choi
Nanoscale, 2024
2024
The system can't perform the operation now. Try again later.
Articles 1–20