Armand Béché
Armand Béché
EMAT
Verified email at uantwerpen.be - Homepage
Title
Cited by
Cited by
Year
Improved precision in strain measurement using nanobeam electron diffraction
A Béché, JL Rouvière, L Clément, JM Hartmann
Applied Physics Letters 95 (12), 123114, 2009
1372009
Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction
K Müller, FF Krause, A Béché, M Schowalter, V Galioit, S Löffler, ...
Nature communications 5 (1), 1-8, 2014
1322014
Magnetic monopole field exposed by electrons
A Béché, R Van Boxem, G Van Tendeloo, J Verbeeck
Nature Physics 10 (1), 26-29, 2014
1232014
Theory and applications of free-electron vortex states
KY Bliokh, IP Ivanov, G Guzzinati, L Clark, R Van Boxem, A Béché, ...
Physics Reports 690, 1-70, 2017
1212017
Strain measurement at the nanoscale: comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron …
A Béché, JL Rouvière, JP Barnes, D Cooper
Ultramicroscopy 131, 10-23, 2013
1042013
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction
JL Rouviere, A Béché, Y Martin, T Denneulin, D Cooper
Applied Physics Letters 103 (24), 241913, 2013
872013
A new way of producing electron vortex probes for STEM
J Verbeeck, H Tian, A Béché
Ultramicroscopy 113, 83-87, 2012
832012
A transition from local equilibrium to paraequilibrium kinetics for ferrite growth in Fe–C–Mn: A possible role of interfacial segregation
HS Zurob, CR Hutchinson, A Béché, GR Purdy, YJM Bréchet
Acta Materialia 56 (10), 2203-2211, 2008
732008
Exploiting lens aberrations to create electron-vortex beams
L Clark, A Béché, G Guzzinati, A Lubk, M Mazilu, R Van Boxem, ...
Physical review letters 111 (6), 064801, 2013
702013
Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope
D Cooper, T Denneulin, N Bernier, A Béché, JL Rouvière
Micron 80, 145-165, 2016
672016
Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution
D Cooper, JP Barnes, JM Hartmann, A Béché, JL Rouviere
Applied Physics Letters 95 (5), 053501, 2009
592009
Dark field electron holography for strain measurement
A Béché, JL Rouvière, JP Barnes, D Cooper
Ultramicroscopy 111 (3), 227-238, 2011
532011
Measurement of atomic electric fields and charge densities from average momentum transfers using scanning transmission electron microscopy
K Müller-Caspary, FF Krause, T Grieb, S Löffler, M Schowalter, A Béché, ...
Ultramicroscopy 178, 62-80, 2017
512017
Probing the symmetry of the potential of localized surface plasmon resonances with phase-shaped electron beams
G Guzzinati, A Béché, H Lourenco-Martins, J Martin, M Kociak, ...
Nature communications 8 (1), 1-8, 2017
512017
Probing the symmetry of the potential of localized surface plasmon resonances with phase-shaped electron beams
G Guzzinati, A Béché, H Lourenco-Martins, J Martin, M Kociak, ...
Nature communications 8 (1), 1-8, 2017
492017
3D magnetic induction maps of nanoscale materials revealed by electron holographic tomography
D Wolf, LA Rodriguez, A Béché, E Javon, L Serrano, C Magen, C Gatel, ...
Chemistry of Materials 27 (19), 6771-6778, 2015
482015
Using electron vortex beams to determine chirality of crystals in transmission electron microscopy
R Juchtmans, A Béché, A Abakumov, M Batuk, J Verbeeck
Physical Review B 91 (9), 094112, 2015
472015
Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography
D Cooper, A Béché, JM Hartmann, V Carron, JL Rouvière
Applied Physics Letters 96 (11), 113508, 2010
452010
Measuring the orbital angular momentum of electron beams
G Guzzinati, L Clark, A Béché, J Verbeeck
Physical Review A 89 (2), 025803, 2014
432014
Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution
D Cooper, A Béché, JM Hartmann, V Carron, JL Rouvière
Semiconductor Science and Technology 25 (9), 095012, 2010
422010
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