Peide Ye

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Gang QiuUniversity of MinnesotaVerified email at g.ucla.edu
Han LiuApple Inc.Verified email at apple.com
Adam T. NealAir Force Research LabVerified email at us.af.mil
Yi XUANUniversity of Pittsburgh, School of MedicineVerified email at pitt.edu
Xianfan XuPurdue UniversityVerified email at purdue.edu
Yanqing WuPeking UniversityVerified email at pku.edu.cn
Wenzhuo Wu (武文倬)School of IE; Flex Lab; Birck Nanotechnology Center; Purdue Quantum Science&Engineering InstituteVerified email at purdue.edu
Hong ZhouXidian UniversityVerified email at xidian.edu.cn
Adam CharnasAir Force Research LaboratoryVerified email at purdue.edu
Zehao LinPhD Candidate in Electrical & Computer Engineering, Purdue UniversityVerified email at purdue.edu
Haiyan WangPurdue UniversityVerified email at purdue.edu
Chang NiuPurdue UniversityVerified email at purdue.edu
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityVerified email at purdue.edu
Ali ShakouriProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Dennis Han Chung LinIMECVerified email at imec.be
Yong P. ChenPurdue University; Aarhus University; WPI-AIMR; MUSTVerified email at purdue.edu
Dieter WeissUniversitaet Regensburg, Max-Planck Institut FKF Stuttgart, TU München; Technical University MunichVerified email at ur.de
M. HongNatl Taiwan Univ. Bell LaboratoriesVerified email at phys.ntu.edu.tw
Sami AlghamdiAssociate Professor at King Abdulaziz University - PhD, Purdue UniversityVerified email at kau.edu.sa
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu

Peide Ye

Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University

Verified email at purdue.edu - Homepage

Microelectronic devices nano-materials nano-electronics condense-matter physics


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Phosphorene: an unexplored 2D semiconductor with a high hole mobility H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye ACS nano 8 (4), 4033-4041, 2014	6581	2014
Semiconducting black phosphorus: synthesis, transport properties and electronic applications H Liu, Y Du, Y Deng, DY Peide Chemical Society Reviews 44 (9), 2732-2743, 2015	1531	2015
Black Phosphorus–Monolayer MoS₂ van der Waals Heterojunction p–n Diode Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ... ACS nano 8 (8), 8292-8299, 2014	1339	2014
Channel Length Scaling of MoS₂ MOSFETs H Liu, AT Neal, PD Ye ACS nano 6 (10), 8563-8569, 2012	915	2012
Bandgap engineering of two-dimensional semiconductor materials A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ... npj 2D Materials and Applications 4 (1), 29, 2020	819	2020
Chloride Molecular Doping Technique on 2D Materials: WS₂ and MoS₂ L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano letters 14 (11), 6275-6280, 2014	789	2014
Field-effect transistors made from solution-grown two-dimensional tellurene Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ... Nature Electronics 1 (4), 228-236, 2018	759	2018
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ... Nature communications 6 (1), 8572, 2015	718	2015
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ... Nature nanotechnology 2 (6), 378-384, 2007	636	2007
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang Applied Physics Letters 86 (6), 2005	597	2005
Phosphorene excites materials scientists ES Reich Nature 506 (7486), 19, 2014	578	2014
InP-based transistor fabrication P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza US Patent 8,329,541, 2012	537	2012
Dual-Gate MOSFET With Atomic-Layer-Depositedas Top-Gate Dielectric H Liu, DY Peide IEEE electron device letters 33 (4), 546-548, 2012	531	2012
Steep-slope hysteresis-free negative capacitance MoS₂ transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature nanotechnology 13 (1), 24-28, 2018	513	2018
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling Y Du, H Liu, Y Deng, PD Ye ACS nano 8 (10), 10035-10042, 2014	499	2014
Electrons in a periodic magnetic field induced by a regular array of micromagnets PD Ye, D Weiss, RR Gerhardts, M Seeger, K Von Klitzing, K Eberl, ... Physical review letters 74 (15), 3013, 1995	448	1995
A ferroelectric semiconductor field-effect transistor M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ... Nature Electronics 2 (12), 580-586, 2019	445	2019
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm Y Xuan, YQ Wu, PD Ye IEEE Electron Device Letters 29 (4), 294-296, 2008	414	2008
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ... Applied Physics Letters 83 (1), 180-182, 2003	411	2003
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye Nano letters 13 (6), 2640-2646, 2013	392	2013

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