| N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013 | 248 | 2013 |
| Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability C Xu, SK Kolluri, K Endo, K Banerjee IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2013 | 73 | 2013 |
| Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an Al2O3 Etch-Stop Technology S Kolluri, S Keller, SP DenBaars, UK Mishra Electron Device Letters, IEEE 33 (1), 44-46, 2012 | 54* | 2012 |
| Modeling and analysis of self-heating in FinFET devices for improved circuit and EOS/ESD performance S Kolluri, K Endo, E Suzuki, K Banerjee 2007 IEEE International Electron Devices Meeting, 177-180, 2007 | 53 | 2007 |
| N-polar GaN MIS-HEMTs with a 12.1-W/mm continuous-wave output power density at 4 GHz on sapphire substrate S Kolluri, S Keller, SP DenBaars, UK Mishra IEEE electron device letters 32 (5), 635-637, 2011 | 44 | 2011 |
| Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs A Sasikumar, A Arehart, S Kolluri, MH Wong, S Keller, SP DenBaars, ... IEEE electron device letters 33 (5), 658-660, 2012 | 42 | 2012 |
| Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility … S Kolluri, S Keller, D Brown, G Gupta, S Rajan, SP DenBaars, UK Mishra Journal of applied physics 108 (7), 2010 | 37 | 2010 |
| RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate S Kolluri, Y Pei, S Keller, SP Denbaars, UK Mishra Electron Device Letters, IEEE 30 (6), 584-586, 2009 | 32 | 2009 |
| Fast 3-D thermal analysis of complex interconnect structures using electrical modeling and simulation methodologies C Xu, L Jiang, SK Kolluri, BJ Rubin, A Deutsch, H Smith, K Banerjee Proceedings of the 2009 International Conference on Computer-Aided Design …, 2009 | 30 | 2009 |
| RF performance of deep-recessed N-polar GaN MIS-HEMTs using a selective etch technology without ex situ surface passivation S Kolluri, DF Brown, MH Wong, S Dasgupta, S Keller, SP DenBaars, ... IEEE Electron Device Letters 32 (2), 134-136, 2010 | 23 | 2010 |
| Thermal modeling of on-chip interconnects and 3D packaging using EM tools L Jiang, S Kolluri, BJ Rubin, H Smith, EG Colgan, MR Scheuermann, ... 2008 IEEE-EPEP Electrical Performance of Electronic Packaging, 279-282, 2008 | 19 | 2008 |
| GaN transistors with polysilicon layers for creating additional components J Cao, R Beach, A Lidow, A Nakata, G Zhao, Y Ma, R Strittmatter, ... US Patent 9,214,461, 2015 | 18 | 2015 |
| N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess S Kolluri, S Keller, SP DenBaars, UK Mishra 69th Device Research Conference, 215-216, 2011 | 17 | 2011 |
| Impact ionization in N-polar AlGaN/GaN high electron mobility transistors N Killat, MJ Uren, S Keller, S Kolluri, UK Mishra, M Kuball Applied Physics Letters 105 (6), 2014 | 16 | 2014 |
| Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures GA Umana-Membreno, TB Fehlberg, S Kolluri, DF Brown, S Keller, ... Applied Physics Letters 98 (22), 2011 | 10 | 2011 |
| Methodology for Thermal Modeling of On-Chip Interconnects Based on Electromagnetic Simulation Tools H Smith, L Jiang, A Deutsch, K Chanda, BJ Rubin, J Gill, SK Kolluri US Patent App. 12/037,753, 2009 | 10 | 2009 |
| GaN transistors with polysilicon layers used for creating additional components J Cao, R Beach, A Lidow, A Nakata, G Zhao, Y Ma, R Strittmatter, ... US Patent 9,837,438, 2017 | 9 | 2017 |
| Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates GA Umana-Membreno, TB Fehlberg, S Kolluri, DF Brown, G Parish, ... Microelectronic engineering 88 (7), 1079-1082, 2011 | 7 | 2011 |
| Isolation structure in gallium nitride devices and integrated circuits Z Chunhua, J Cao, A Lidow, R Beach, A Nakata, R Strittmatter, G Zhao, ... US Patent 9,171,911, 2015 | 5 | 2015 |
| S. Member, S. Keller, SP Denbaars, UK Mishra, Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an Al2O3 Etch-Stop Technology S Kolluri IEEE Electron Device Letters 33 (1), 44-46, 2012 | 4 | 2012 |
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraVerified email at engineering.ucsb.edu
