Barry Brennan
Title
Cited by
Cited by
Year
Effect of disorder on Raman scattering of single-layer Mo S 2
S Mignuzzi, AJ Pollard, N Bonini, B Brennan, IS Gilmore, MA Pimenta, ...
Physical Review B 91 (19), 195411, 2015
4042015
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ...
Applied Physics Letters 94 (16), 162101, 2009
2922009
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ...
ACS nano 7 (11), 10354-10361, 2013
2262013
A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0 …
É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 024101, 2011
1522011
Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts
S Caneva, RS Weatherup, BC Bayer, B Brennan, SJ Spencer, K Mingard, ...
Nano letters 15 (3), 1867-1875, 2015
1312015
Understanding and controlling Cu-catalyzed graphene nucleation: the role of impurities, roughness, and oxygen scavenging
P Braeuninger-Weimer, B Brennan, AJ Pollard, S Hofmann
Chemistry of Materials 28 (24), 8905-8915, 2016
1162016
Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As
B Brennan, M Milojevic, CL Hinkle, FS Aguirre-Tostado, G Hughes, ...
Applied Surface Science 257 (9), 4082-4090, 2011
992011
Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission
B Brennan, G Hughes
Journal of Applied Physics 108 (5), 053516, 2010
892010
In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric
E OConnor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 022902-022902-3, 2008
692008
Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, ...
Journal of Applied Physics 116 (1), 014504, 2014
682014
Quantitative characterization of defect size in graphene using Raman spectroscopy
AJ Pollard, B Brennan, H Stec, BJ Tyler, MP Seah, IS Gilmore, D Roy
Applied Physics Letters 105 (25), 253107, 2014
582014
Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 99 (17), 172901, 2011
572011
Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems
S McDonnell, H Dong, JM Hawkins, B Brennan, M Milojevic, ...
Applied Physics Letters 100 (14), 141606, 2012
542012
Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In0. 53Ga0. 47As
B Brennan, M Milojevic, HC Kim, PK Hurley, J Kim, G Hughes, ...
Electrochemical and Solid State Letters 12 (6), H205, 2009
492009
Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors
RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 102 (13), 132903, 2013
432013
In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN
B Brennan, X Qin, H Dong, J Kim, RM Wallace
Applied Physics Letters 101 (21), 211604, 2012
422012
Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on substrates
JG Lozano, S Lozano-Perez, J Bogan, YC Wang, B Brennan, PD Nellist, ...
Applied Physics Letters 98 (12), 123112, 2011
422011
Probing individual point defects in graphene via near-field Raman scattering
S Mignuzzi, N Kumar, B Brennan, IS Gilmore, D Richards, AJ Pollard, ...
Nanoscale 7 (46), 19413-19418, 2015
402015
Indium diffusion through high-k dielectrics in high-k/InP stacks
H Dong, W Cabrera, RV Galatage, KC Santosh, B Brennan, X Qin, ...
Applied Physics Letters 103 (6), 061601, 2013
402013
The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
392013
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