Chi Xu (徐驰)
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Direct-gap photoluminescence with tunable emission wavelength in alloys on silicon
J Mathews, RT Beeler, J Tolle, C Xu, R Roucka, J Kouvetakis, ...
Applied Physics Letters 97 (22), 221912, 2010
Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys
JD Gallagher, C Xu, L Jiang, J Kouvetakis, J MenÚndez
Applied Physics Letters 103 (20), 202104, 2013
Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications
L Jiang, C Xu, JD Gallagher, R Favaro, T Aoki, J MenÚndez, J Kouvetakis
Chemistry of Materials 26 (8), 2522-2531, 2014
Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si (100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)
G Grzybowski, L Jiang, RT Beeler, T Watkins, AVG Chizmeshya, C Xu, ...
Chemistry of Materials 24 (9), 1619-1628, 2012
Compositional dependence of the absorption edge and dark currents in Ge1− x− y Si x Sn y/Ge (100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4
RT Beeler, C Xu, DJ Smith, G Grzybowski, J MenÚndez, J Kouvetakis
Applied Physics Letters 101 (22), 221111, 2012
Photoluminescence from heavily doped GeSn: P materials grown on Si (100)
G Grzybowski, L Jiang, J Mathews, R Roucka, C Xu, RT Beeler, ...
Applied Physics Letters 99 (17), 171910, 2011
Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases
C Xu, CL Senaratne, RJ Culbertson, J Kouvetakis, J MenÚndez
Journal of Applied Physics 122 (12), 125702, 2017
New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case
C Xu, RT Beeler, L Jiang, G Grzybowski, AVG Chizmeshya, J MenÚndez, ...
Semiconductor Science and Technology 28 (10), 105001, 2013
Experimental doping dependence of the lattice parameter in -type Ge: Identifying the correct theoretical framework by comparison with Si
C Xu, CL Senaratne, J Kouvetakis, J MenÚndez
Physical Review B 93 (4), 041201, 2016
Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties
C Xu, PM Wallace, DA Ringwala, SLY Chang, CD Poweleit, J Kouvetakis, ...
Applied Physics Letters 114 (21), 212104, 2019
Optical properties of Ge1-x-ySixSny alloys with y> x: Direct bandgaps beyond 1550 nm
C Xu, L Jiang, J Kouvetakis, J MenÚndez
Applied Physics Letters 103 (7), 072111, 2013
Molecular Synthesis of High-Performance Near-IR Photodetectors with Independently Tunable Structural and Optical Properties Based on Si–Ge–Sn
C Xu, RT Beeler, GJ Grzybowski, AVG Chizmeshya, DJ Smith, ...
Journal of the American Chemical Society 134 (51), 20756-20767, 2012
Non-radiative recombination in Ge1−ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs
JD Gallagher, CL Senaratne, C Xu, P Sims, T Aoki, DJ Smith, J Menendez, ...
Journal of Applied Physics 117 (24), 245704, 2015
Synthesis and fundamental studies of Si-compatible (Si) GeSn and GeSn mid-IR systems with ultrahigh Sn contents
C Xu, D Ringwala, D Wang, L Liu, CD Poweleit, SLY Chang, HL Zhuang, ...
Chemistry of Materials, 2019
Synthesis and optical properties of Sn-rich Ge1–x–ySixSny materials and devices
C Xu, RT Beeler, L Jiang, JD Gallagher, R Favaro, J Menendez, ...
Thin Solid Films 557, 177-182, 2014
Ge1− x− ySixSny light emitting diodes on silicon for mid-infrared photonic applications
JD Gallagher, C Xu, CL Senaratne, T Aoki, PM Wallace, J Kouvetakis, ...
Journal of Applied Physics 118 (13), 135701, 2015
Frustrated incomplete donor ionization in ultra-low resistivity germanium films
C Xu, CL Senaratne, J Kouvetakis, J MenÚndez
Applied Physics Letters 105 (23), 232103, 2014
Doping dependence of the optical dielectric function in n-type germanium
C Xu, J Kouvetakis, J MenÚndez
Journal of Applied Physics 125 (8), 085704, 2019
Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys
C Xu, CL Senaratne, J Kouvetakis, J MenÚndez
Solid-State Electronics 110, 76-82, 2015
Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices
RT Beeler, J Gallagher, C Xu, L Jiang, CL Senaratne, DJ Smith, ...
ECS Journal of Solid State Science and Technology 2 (9), Q172-Q177, 2013
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