Nadeemullah Mahadik
TitleCited byYear
A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric
MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ...
ECS Journal of Solid State Science and Technology 5 (9), P468-P470, 2016
882016
Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
S Rafique, L Han, MJ Tadjer, JA Freitas Jr, NA Mahadik, H Zhao
Applied Physics Letters 108 (18), 182105, 2016
842016
Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ...
Journal of Electronic Materials 45 (4), 2031-2037, 2016
672016
Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
N Nepal, SB Qadri, JK Hite, NA Mahadik, MA Mastro, CR Eddy Jr
Applied Physics Letters 103 (8), 082110, 2013
452013
Ultra-low resistivity Al+ implanted 4H–SiC obtained by microwave annealing and a protective graphite cap
SG Sundaresan, NA Mahadik, SB Qadri, JA Schreifels, YL Tian, Q Zhang, ...
Solid-State Electronics 52 (1), 140-145, 2008
412008
Role of thermal expansion matching in CdTe heteroepitaxy on highly lattice-mismatched substrates
RN Jacobs, J Markunas, J Pellegrino, LA Almeida, M Groenert, ...
Journal of Crystal Growth 310 (12), 2960-2965, 2008
352008
Epitaxial growth of cubic and hexagonal InN thin films via plasma-assisted atomic layer epitaxy
N Nepal, NA Mahadik, LO Nyakiti, SB Qadri, MJ Mehl, JK Hite, CR Eddy Jr
Crystal Growth & Design 13 (4), 1485-1490, 2013
332013
Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers
NA Mahadik, RE Stahlbush, MG Ancona, EA Imhoff, KD Hobart, ...
Applied Physics Letters 100 (4), 042102, 2012
322012
Microwave annealing of Mg-implanted and in situ Be-doped GaN
GS Aluri, M Gowda, NA Mahadik, SG Sundaresan, MV Rao, JA Schreifels, ...
Journal of Applied Physics 108 (8), 083103, 2010
322010
Relevance of thermal mismatch in large-area composite substrates for HgCdTe heteroepitaxy
RN Jacobs, LA Almeida, J Markunas, J Pellegrino, M Groenert, ...
Journal of electronic materials 37 (9), 1480-1487, 2008
252008
Failure mechanism of THz GaAs photoconductive antenna
SB Qadri, DH Wu, BD Graber, NA Mahadik, A Garzarella
Applied Physics Letters 101 (1), 011910, 2012
212012
Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications
MJ Tadjer, NA Mahadik, JA Freitas Jr, ER Glaser, AD Koehler, LE Luna, ...
Gallium Nitride Materials and Devices XIII 10532, 1053212, 2018
202018
Growth of high crystalline quality HVPE-GaN crystals with controlled electrical properties
JA Freitas Jr, JC Culbertson, NA Mahadik, T Sochacki, M Bockowski, ...
Crystal Growth & Design 15 (10), 4837-4842, 2015
202015
Phase transition in near the Curie temperature
SB Qadri, JA Bellotti, A Garzarella, T Wieting, DH Wu, NA Mahadik
Applied physics letters 89 (22), 222911, 2006
172006
Structural inhomogeneities and impurity incorporation in growth of high-quality ammonothermal GaN substrates
NA Mahadik, SB Qadri, JA Freitas Jr
Crystal Growth & Design 15 (1), 291-294, 2014
162014
Mitigating defects within silicon carbide epitaxy
JD Caldwell, RE Stahlbush, NA Mahadik
Journal of the electrochemical society 159 (3), R46-R51, 2012
162012
Structure and morphology of inclusions in 4 offcut 4H-SiC epitaxial layers
NA Mahadik, RE Stahlbush, SB Qadri, OJ Glembocki, DA Alexson, ...
Journal of electronic materials 40 (4), 413-418, 2011
152011
HVPE GaN wafers with improved crystalline and electrical properties
JA Freitas Jr, JC Culbertson, NA Mahadik, T Sochacki, M Iwinska, ...
Journal of Crystal Growth 456, 113-120, 2016
132016
Effect of stacking faults originating from half loop arrays on electrical behavior of 10 kV 4H-SiC PiN diodes
RE Stahlbush, QCJ Zhang, AK Agarwal, NA Mahadik
Materials Science Forum 717, 387-390, 2012
112012
Electroluminescence spectral imaging of extended defects in 4H-SiC
AJ Giles, JD Caldwell, RE Stahlbush, BA Hull, NA Mahadik, OJ Glembocki, ...
Journal of electronic materials 39 (6), 777-780, 2010
102010
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Articles 1–20