Zhongrui Wang
TitleCited byYear
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Z Wang, S Joshi, SE Savel’ev, H Jiang, R Midya, P Lin, M Hu, N Ge, ...
Nature materials 16 (1), 101, 2017
5432017
Analogue signal and image processing with large memristor crossbars
C Li, M Hu, Y Li, H Jiang, N Ge, E Montgomery, J Zhang, W Song, ...
Nature Electronics 1 (1), 52, 2018
1822018
Fully memristive neural networks for pattern classification with unsupervised learning
Z Wang, S Joshi, S Savel’ev, W Song, R Midya, Y Li, M Rao, P Yan, ...
Nature Electronics 1 (2), 137, 2018
1582018
Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
C Li, D Belkin, Y Li, P Yan, M Hu, N Ge, H Jiang, E Montgomery, P Lin, ...
Nature Communications 9 (1), 2385, 2018
1142018
Anatomy of Ag/Hafnia‐Based Selectors with 1010 Nonlinearity
R Midya, Z Wang, J Zhang, SE Savel'ev, C Li, M Rao, MH Jang, S Joshi, ...
Advanced Materials 29 (12), 1604457, 2017
1132017
Temperature Instability of Resistive Switching on-Based RRAM Devices
Z Fang, HY Yu, WJ Liu, ZR Wang, XA Tran, B Gao, JF Kang
IEEE Electron Device Letters 31 (5), 476-478, 2010
1012010
Threshold switching of Ag or Cu in dielectrics: materials, mechanism, and applications
Z Wang, M Rao, R Midya, S Joshi, H Jiang, P Lin, W Song, S Asapu, ...
Advanced Functional Materials 28 (6), 1704862, 2018
772018
Threshold switching of Ag or Cu in dielectrics: materials, mechanism, and applications
Z Wang, M Rao, R Midya, S Joshi, H Jiang, P Lin, W Song, S Asapu, ...
Advanced Functional Materials 28 (6), 1704862, 2018
772018
A novel true random number generator based on a stochastic diffusive memristor
H Jiang, D Belkin, SE Savel’ev, S Lin, Z Wang, Y Li, S Joshi, R Midya, C Li, ...
Nature communications 8 (1), 882, 2017
702017
Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching
B Gao, JF Kang, YS Chen, FF Zhang, B Chen, P Huang, LF Liu, XY Liu, ...
2011 International Electron Devices Meeting, 17.4. 1-17.4. 4, 2011
682011
Highly Uniform, Self-Compliance, and Forming-Free ALD-Based RRAM With Ge Doping
Z Wang, WG Zhu, AY Du, L Wu, Z Fang, XA Tran, WJ Liu, KL Zhang, ...
IEEE Transactions on electron devices 59 (4), 1203-1208, 2012
662012
A High-Yield-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration
XA Tran, HY Yu, YC Yeo, L Wu, WJ Liu, ZR Wang, Z Fang, KL Pey, ...
IEEE Electron Device Letters 32 (3), 396-398, 2011
652011
Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor
H Jiang, L Han, P Lin, Z Wang, MH Jang, Q Wu, M Barnell, JJ Yang, ...
Scientific reports 6, 28525, 2016
542016
An artificial nociceptor based on a diffusive memristor
JH Yoon, Z Wang, KM Kim, H Wu, V Ravichandran, Q Xia, CS Hwang, ...
Nature Communications 9 (1), 417, 2018
472018
Transport properties of HfO 2− x based resistive-switching memories
Z Wang, HY Yu, XA Tran, Z Fang, J Wang, H Su
Physical Review B 85 (19), 195322, 2012
442012
Review of memristor devices in neuromorphic computing: materials sciences and device challenges
Y Li, Z Wang, R Midya, Q Xia, JJ Yang
Journal of Physics D: Applied Physics 51 (50), 503002, 2018
422018
Study of preferential localized degradation and breakdown of HfO 2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO 2 dielectrics
K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ...
Microelectronic Engineering 109, 364-369, 2013
372013
Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials
XA Tran, B Gao, JF Kang, X Wu, L Wu, Z Fang, ZR Wang, KL Pey, YC Yeo, ...
2011 International Electron Devices Meeting, 31.2. 1-31.2. 4, 2011
342011
High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application
XA Tran, B Gao, JF Kang, L Wu, ZR Wang, Z Fang, KL Pey, YC Yeo, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 44-45, 2011
302011
Investigation of HfO2 high-k dielectrics electronic structure on SiO2/Si substrate by x-ray photoelectron spectroscopy
TL Duan, HY Yu, L Wu, ZR Wang, YL Foo, JS Pan
Applied Physics Letters 99 (1), 012902, 2011
292011
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Articles 1–20