| Stochastic resonance in a metal-oxide memristive device AN Mikhaylov, DV Guseinov, AI Belov, DS Korolev, VA Shishmakova, ... Chaos, Solitons & Fractals 144, 110723, 2021 | 149 | 2021 |
| Variability in Resistive Memories JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ... Advanced Intelligent Systems, 2200338, 2023 | 111 | 2023 |
| Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ... Microelectronic Engineering 214, 104-109, 2019 | 88 | 2019 |
| On the thermal models for resistive random access memory circuit simulation JB Roldán, G González-Cordero, R Picos, E Miranda, F Palumbo, ... Nanomaterials 11 (5), 1261, 2021 | 69 | 2021 |
| Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories JB Roldán, FJ Alonso, AM Aguilera, D Maldonado, M Lanza Journal of Applied Physics 125 (17), 2019 | 67 | 2019 |
| Memristor variability and stochastic physical properties modeling from a multivariate time series approach FJ Alonso, D Maldonado, AM Aguilera, JB Roldán Chaos, Solitons & Fractals 143, 110461, 2021 | 54 | 2021 |
| Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories D Maldonado, F Aguirre, G González-Cordero, AM Roldán, MB González, ... Journal of Applied Physics 130 (5), 2021 | 35 | 2021 |
| Spiking neural networks based on two-dimensional materials JB Roldan, D Maldonado, C Aguilera-Pedregosa, E Moreno, F Aguirre, ... npj 2D Materials and Applications 6 (1), 63, 2022 | 32 | 2022 |
| Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective D Maldonado, S Aldana, MB Gonzalez, F Jiménez-Molinos, MJ Ibáñez, ... Microelectronic Engineering 257, 111736, 2022 | 31 | 2022 |
| Experimental evaluation of the dynamic route map in the reset transition of memristive ReRAMs D Maldonado, MB Gonzalez, F Campabadal, F Jimenez-Molinos, ... Chaos, Solitons & Fractals 139, 110288, 2020 | 31 | 2020 |
| Parameter extraction techniques for the analysis and modeling of resistive memories D Maldonado, S Aldana, MB González, F Jiménez-Molinos, ... Microelectronic Engineering 265, 111876, 2022 | 25 | 2022 |
| Resistive switching and charge transport in laser-fabricated graphene oxide memristors: a time series and quantum point contact modeling approach N Rodriguez, D Maldonado, FJ Romero, FJ Alonso, AM Aguilera, ... Materials 12 (22), 3734, 2019 | 20 | 2019 |
| An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices D Maldonado, C Aguilera-Pedregosa, G Vinuesa, H García, S Duenas, ... Chaos, Solitons & Fractals 160, 112247, 2022 | 16 | 2022 |
| Non-uniform spline quasi-interpolation to extract the series resistance in resistive switching memristors for compact modeling purposes MJ Ibáñez, D Barrera, D Maldonado, R Yáñez, JB Roldán Mathematics 9 (17), 2159, 2021 | 16 | 2021 |
| Holistic variability analysis in resistive switching memories using a Two-Dimensional Variability Coefficient C Acal, D Maldonado, AM Aguilera, K Zhu, M Lanza, JB Roldán ACS Applied Materials & Interfaces 15 (15), 19102-19110, 2023 | 13 | 2023 |
| Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories D Maldonado, AM Roldán, MB González, F Jiménez-Molinos, ... Microelectronic Engineering 215, 110983, 2019 | 12 | 2019 |
| Parameter extraction methods for assessing device-to-device and cycle-to-cycle variability of memristive devices at wafer scale E Perez, D Maldonado, EPB Quesada, MK Mahadevaiah, ... IEEE Transactions on Electron Devices 70 (1), 360-365, 2022 | 11 | 2022 |
| Conductance quantization in h-bn memristors JB Roldan, D Maldonado, A Cantudo, Y Shen, W Zheng, M Lanza Applied Physics Letters 122 (20), 2023 | 10 | 2023 |
| Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory M Calixto, D Maldonado, E Miranda, JB Roldán Journal of Physics D: Applied Physics 53 (29), 295106, 2020 | 10 | 2020 |
| Time series modeling of the cycle-to-cycle variability in h-BN based memristors JB Roldán, D Maldonado, FJ Alonso, AM Roldán, F Hui, Y Shi, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 9 | 2021 |
Juan B. RoldánDepartment of Electronics and Computer Technology. Granada University (Spain)Verified email at ugr.es
