P.M. Lenahan
P.M. Lenahan
Distinguished Professor of Engineering Science and Mecahnics and Co-Chair, Inter-College Graduate
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Hole traps and trivalent silicon centers in metal/oxide/silicon devices
PM Lenahan, PV Dressendorfer
Journal of Applied Physics 55 (10), 3495-3499, 1984
What can electron paramagnetic resonance tell us about the system?
PM Lenahan, JF Conley Jr
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
DT Krick, PM Lenahan, J Kanicki
Journal of applied physics 64 (7), 3558-3563, 1988
The effect of interfacial layer properties on the performance of Hf-based gate stack devices
G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ...
Journal of Applied Physics 100 (9), 2006
Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates
YY Kim, PM Lenahan
Journal of applied physics 64 (7), 3551-3557, 1988
Thermal-equilibrium defect processes in hydrogenated amorphous silicon
ZE Smith, S Aljishi, D Slobodin, V Chu, S Wagner, PM Lenahan, RR Arya, ...
Physical review letters 57 (19), 2450, 1986
An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface
PM Lenahan, PV Dressendorfer
Journal of Applied Physics 54 (3), 1457-1460, 1983
First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride
WL Warren, PM Lenahan, SE Curry
Physical review letters 65 (2), 207, 1990
Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface
PM Lenahan, PV Dressendorfer
Applied Physics Letters 41 (6), 542-544, 1982
Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structures
PM Lenahan, PV Dressendorfer
Applied physics letters 44 (1), 96-98, 1984
Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si
AY Kang, PM Lenahan, JF Conley Jr
Applied physics letters 83 (16), 3407-3409, 2003
Atomic-scale defects involved in the negative-bias temperature instability
JP Campbell, PM Lenahan, CJ Cochrane, AT Krishnan, S Krishnan
IEEE Transactions on Device and Materials Reliability 7 (4), 540-557, 2007
First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride
PM Lenahan, SE Curry
Applied physics letters 56 (2), 157-159, 1990
An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors
CJ Cochrane, PM Lenahan, AJ Lelis
Journal of Applied Physics 109 (1), 2011
Nature of the E′ deep hole trap in metal‐oxide‐semiconductor oxides
HS Witham, PM Lenahan
Applied physics letters 51 (13), 1007-1009, 1987
Nature of the dominant deep trap in amorphous silicon nitride
DT Krick, PM Lenahan, J Kanicki
Physical Review B 38 (12), 8226, 1988
Density of states of interface trap centers
JP Campbell, PM Lenahan
Applied physics letters 80 (11), 1945-1947, 2002
Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride
WL Warren, PM Lenahan
Physical Review B 42 (3), 1773, 1990
A spin dependent recombination study of radiation induced defects at and near the Si/SiO/sub 2/interface
MA Jupina, PM Lenahan
IEEE Transactions on Nuclear Science 36 (6), 1800-1807, 1989
Observation and electronic characterization of ‘‘new’’E′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping
JF Conley, PM Lenahan, HL Evans, RK Lowry, TJ Morthorst
Journal of applied physics 76 (5), 2872-2880, 1994
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