Bipolar resistive switching in polycrystalline TiO2 films K Tsunoda, Y Fukuzumi, JR Jameson, Z Wang, PB Griffin, Y Nishi Applied physics letters 90 (11), 2007 | 251 | 2007 |
Third-order nanocircuit elements for neuromorphic engineering S Kumar, RS Williams, Z Wang Nature 585 (7826), 518-523, 2020 | 222 | 2020 |
Physical origins of current and temperature controlled negative differential resistances in NbO2 S Kumar, Z Wang, N Davila, N Kumari, KJ Norris, X Huang, JP Strachan, ... Nature communications 8 (1), 658, 2017 | 178 | 2017 |
Conduction channel formation and dissolution due to oxygen thermophoresis/diffusion in hafnium oxide memristors S Kumar, Z Wang, X Huang, N Kumari, N Davila, JP Strachan, D Vine, ... ACS nano 10 (12), 11205-11210, 2016 | 113 | 2016 |
Oxygen migration during resistance switching and failure of hafnium oxide memristors S Kumar, Z Wang, X Huang, N Kumari, N Davila, JP Strachan, D Vine, ... Applied Physics Letters 110 (10), 2017 | 75 | 2017 |
Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism Z Wang, S Kumar, Y Nishi, HSP Wong Applied Physics Letters 112 (19), 2018 | 37 | 2018 |
Effect of thermal insulation on the electrical characteristics of NbOx threshold switches Z Wang, S Kumar, HSP Wong, Y Nishi Applied Physics Letters 112 (7), 2018 | 35 | 2018 |
Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors S Kumar, N Davila, Z Wang, X Huang, JP Strachan, D Vine, ALD Kilcoyne, ... Nanoscale 9 (5), 1793-1798, 2017 | 34 | 2017 |
Nat. Electron. Z Wang, S Joshi, S Savel'Ev, W Song, R Midya, Y Li, MY Rao, P Yan, ... Nat. Electron 1, 582-588, 2018 | 32 | 2018 |
Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS) Z Jiang, Z Wang, X Zheng, S Fong, S Qin, HY Chen, C Ahn, J Cao, Y Nishi, ... 2016 IEEE international electron devices meeting (IEDM), 21.3. 1-21.3. 4, 2016 | 18 | 2016 |
Intrinsic limits of leakage current in self-heating-triggered threshold switches Z Wang, S Kumar, RS Williams, Y Nishi, HSP Wong Applied Physics Letters 114 (18), 2019 | 14 | 2019 |
Ultrafast accelerated retention test methodology for RRAM using micro thermal stage Z Wang, Z Jiang, X Zheng, S Fong, HY Chen, HSP Wong, Y Nishi IEEE Electron Device Letters 38 (7), 863-866, 2017 | 10 | 2017 |
ACS Nano 10, 11205 (2016) S Kumar, Z Wang, X Huang, N Kumari, N Davila, JP Strachan, D Vine, ... Article CAS, 0 | 9 | |
Savel, ev R Midya, Z Wang, J Zhang SE, 0 | 8 | |
Fully memristive neural networks for pattern classification with unsupervised learning. Nat. Electron. 1 (2), 137–145 (2018) Z Wang, S Joshi, S Savel’Ev, W Song, R Midya, Y Li, M Rao, P Yan, ... | 6 | |
Bidirectional analog conductance modulation for RRAM-based neural networks Z Jiang, Z Wang, X Zheng, SW Fong, S Qin, HY Chen, EC Ahn, J Cao, ... IEEE Transactions on Electron Devices 67 (11), 4904-4910, 2020 | 5 | 2020 |
Q. wu, M. Barnell, G.-L. Li, H. Xin, S. Williams, Q. Xia, and JJ Yang Z Wang, S Joshi, S Savel’ev, H Jiang, R Midya, P Lin, M Hu, N Ge, ... Nat. Mater 16, 101, 2016 | 5 | 2016 |