Neeraj Nepal
Neeraj Nepal
Verified email at nrl.navy.mil
TitleCited byYear
Temperature and compositional dependence of the energy band gap of AlGaN alloys
N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang
Applied Physics Letters 87 (24), 242104, 2005
1352005
Correlation between optoelectronic and structural properties and epilayer thickness of AlN
BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ...
Applied Physics Letters 90 (24), 241101, 2007
1082007
Correlation between optical and electrical properties of Mg-doped AlN epilayers
ML Nakarmi, N Nepal, C Ugolini, TM Altahtamouni, JY Lin, HX Jiang
Applied physics letters 89 (15), 152120, 2006
1022006
Photoluminescence studies of impurity transitions in AlGaN alloys
N Nepal, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 89 (9), 092107, 2006
1012006
Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
ML Nakarmi, N Nepal, JY Lin, HX Jiang
Applied Physics Letters 94 (9), 091903, 2009
902009
Electroluminescent properties of erbium-doped III–N light-emitting diodes
JM Zavada, SX Jin, N Nepal, JY Lin, HX Jiang, P Chow, B Hertog
Applied physics letters 84 (7), 1061-1063, 2004
852004
Exciton localization in AlGaN alloys
N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 88 (6), 062103, 2006
802006
Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition
C Ugolini, N Nepal, JY Lin, HX Jiang, JM Zavada
Applied physics letters 89 (15), 151903, 2006
752006
Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics
N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr
Applied physics express 4 (5), 055802, 2011
732011
Ultraviolet photoluminescence from Gd-implanted AlN epilayers
JM Zavada, N Nepal, JY Lin, HX Jiang, E Brown, U Hömmerich, J Hite, ...
Applied physics letters 89 (15), 152107, 2006
552006
Excitation dynamics of the emission in Er doped GaN synthesized by metal organic chemical vapor deposition
C Ugolini, N Nepal, JY Lin, HX Jiang, JM Zavada
Applied physics letters 90 (5), 051110, 2007
542007
Growth and photoluminescence studies of Zn-doped AlN epilayers
N Nepal, ML Nakarmi, HU Jang, JY Lin, HX Jiang
Applied physics letters 89 (19), 192111, 2006
492006
Correlation between biaxial stress and free exciton transition in AlN epilayers
BN Pantha, N Nepal, TM Al Tahtamouni, ML Nakarmi, J Li, JY Lin, ...
Applied Physics Letters 91 (12), 121117, 2007
472007
Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation
AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ...
IEEE Electron Device Letters 34 (9), 1115-1117, 2013
462013
Epitaxial growth of III–nitride/graphene heterostructures for electronic devices
N Nepal, VD Wheeler, TJ Anderson, FJ Kub, MA Mastro, RL Myers-Ward, ...
Applied Physics Express 6 (6), 061003, 2013
462013
Optical properties of the nitrogen vacancy in AlN epilayers
N Nepal, KB Nam, ML Nakarmi, JY Lin, HX Jiang, JM Zavada, RG Wilson
Applied physics letters 84 (7), 1090-1092, 2004
462004
Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
N Nepal, SB Qadri, JK Hite, NA Mahadik, MA Mastro, CR Eddy Jr
Applied Physics Letters 103 (8), 082110, 2013
452013
Epitaxial graphene surface preparation for atomic layer deposition of Al2O3
NY Garces, VD Wheeler, JK Hite, GG Jernigan, JL Tedesco, N Nepal, ...
Journal of Applied Physics 109 (12), 124304, 2011
452011
Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition
JM Zavada, N Nepal, C Ugolini, JY Lin, HX Jiang, R Davies, J Hite, ...
Applied Physics Letters 91 (5), 054106, 2007
372007
Growth and photoluminescence studies of Al-rich quantum wells
TM Al Tahtamouni, N Nepal, JY Lin, HX Jiang, WW Chow
Applied physics letters 89 (13), 131922, 2006
372006
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