Jan Mol
Jan Mol
Verified email at qmul.ac.uk - Homepage
Cited by
Cited by
Conductance enlargement in picoscale electroburnt graphene nanojunctions
H Sadeghi, JA Mol, CS Lau, GAD Briggs, J Warner, CJ Lambert
Proceedings of the National Academy of Sciences 112 (9), 2658-2663, 2015
Graphene-porphyrin single-molecule transistors
JA Mol, CS Lau, WJM Lewis, H Sadeghi, C Roche, A Cnossen, JH Warner, ...
Nanoscale 7 (31), 13181-13185, 2015
Spatially resolving valley quantum interference of a donor in silicon
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...
Nature materials 13 (6), 605-610, 2014
Redox-dependent Franck–Condon blockade and Avalanche transport in a graphene–fullerene single-molecule transistor
CS Lau, H Sadeghi, G Rogers, S Sangtarash, P Dallas, K Porfyrakis, ...
Nano letters 16 (1), 170-176, 2016
Quantum simulation of the Hubbard model with dopant atoms in silicon
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...
Nature communications 7 (1), 1-6, 2016
Quantum interference in graphene nanoconstrictions
P Gehring, H Sadeghi, S Sangtarash, CS Lau, J Liu, A Ardavan, ...
Nano letters 16 (7), 4210-4216, 2016
Nanoscale control of graphene electrodes
CS Lau, JA Mol, JH Warner, GAD Briggs
Physical Chemistry Chemical Physics 16 (38), 20398-20401, 2014
Field-effect control of graphene–fullerene thermoelectric nanodevices
P Gehring, A Harzheim, J Spiece, Y Sheng, G Rogers, C Evangeli, ...
Nano letters 17 (11), 7055-7061, 2017
Beyond Marcus theory and the Landauer-BŁttiker approach in molecular junctions: A unified framework
JK Sowa, JA Mol, GAD Briggs, EM Gauger
The Journal of chemical physics 149 (15), 154112, 2018
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
BC Johnson, GC Tettamanzi, ADC Alves, S Thompson, C Yang, ...
Applied Physics Letters 96 (26), 264102, 2010
Charge-insensitive single-atom spin-orbit qubit in silicon
J Salfi, JA Mol, D Culcer, S Rogge
Physical review letters 116 (24), 246801, 2016
Probing the spin states of a single acceptor atom
J Van der Heijden, J Salfi, JA Mol, J Verduijn, GC Tettamanzi, ...
Nano letters 14 (3), 1492-1496, 2014
Scaling limits of graphene nanoelectrodes
SG Sarwat, P Gehring, G Rodriguez Hernandez, JH Warner, GAD Briggs, ...
Nano letters 17 (6), 3688-3693, 2017
Integrated logic circuits using single-atom transistors
JA Mol, J Verduijn, RD Levine, F Remacle, S Rogge
Proceedings of the National Academy of Sciences 108 (34), 13969-13972, 2011
Distinguishing lead and molecule states in graphene-based single-electron transistors
P Gehring, JK Sowa, J Cremers, Q Wu, H Sadeghi, Y Sheng, JH Warner, ...
ACS nano 11 (6), 5325-5331, 2017
One dimensional transport in silicon nanowire junction-less field effect transistors
MM Mirza, FJ Schupp, JA Mol, DA MacLaren, GAD Briggs, DJ Paul
Scientific reports 7 (1), 1-8, 2017
Ternary logic implemented on a single dopant atom field effect silicon transistor
M Klein, JA Mol, J Verduijn, GP Lansbergen, S Rogge, RD Levine, ...
Applied Physics Letters 96 (4), 043107, 2010
Reconfigurable logic devices on a single dopant atom—operation up to a full adder by using electrical spectroscopy
M Klein, GP Lansbergen, JA Mol, S Rogge, RD Levine, F Remacle
ChemPhysChem 10 (1), 162-173, 2009
Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning
P Puczkarski, P Gehring, CS Lau, J Liu, A Ardavan, JH Warner, ...
Applied Physics Letters 107 (13), 133105, 2015
Vibrational effects in charge transport through a molecular double quantum dot
JK Sowa, JA Mol, GAD Briggs, EM Gauger
Physical Review B 95 (8), 085423, 2017
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