Markus Kuhn
Markus Kuhn
Rigaku Corporation
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Cited by
Cited by
Atomic layer deposition of high dielectric constant gate dielectrics
M Metz, C Boyd, M Kuhn, S Datta, J Kavalieros, M Doczy, J Brask, R Chau
US Patent App. 10/943,693, 2006
Intrinsic defects on a TiO2 (110)(1× 1) surface and their reaction with oxygen: a scanning tunneling microscopy study
U Diebold, J Lehman, T Mahmoud, M Kuhn, G Leonardelli, W Hebenstreit, ...
Surface science 411 (1-2), 137-153, 1998
Two-dimensional condensation for uniaxially strained semiconductor fins
JT Kavalieros, NM Zelick, BY Jin, M Kuhn, SM Cea
US Patent 8,211,772, 2012
Reaction of H2S and S2 with Metal/Oxide Surfaces:  Band-Gap Size and Chemical Reactivity
JA Rodriguez, S Chaturvedi, M Kuhn, J Hrbek
The Journal of Physical Chemistry B 102 (28), 5511-5519, 1998
Charge redistribution and electronic behavior in a series of Au-Cu alloys
M Kuhn, TK Sham
Physical Review B 49 (3), 1647, 1994
BTI reliability of 45 nm high-K+ metal-gate process technology
S Pae, M Agostinelli, M Brazier, R Chau, G Dewey, T Ghani, M Hattendorf, ...
2008 IEEE International Reliability Physics Symposium, 352-357, 2008
Surface structure and morphology of Mg-segregated epitaxial Fe 3 O 4 (001) thin films on MgO (001)
JF Anderson, M Kuhn, U Diebold, K Shaw, P Stoyanov, D Lind
Physical Review B 56 (15), 9902, 1997
Charge redistribution in Au-Ag alloys from a local perspective
CC Tyson, A Bzowski, P Kristof, M Kuhn, R Sammynaiken, TK Sham
Physical Review B 45 (16), 8924, 1992
Past, present and future: SiGe and CMOS transistor scaling
KJ Kuhn, A Murthy, R Kotlyar, M Kuhn
ECS Transactions 33 (6), 3, 2010
Method for making a semiconductor device having a high-k gate dielectric
ML Doczy, G Dewey, S Datta, S Pae, JK Brask, J Kavalieros, MV Metz, ...
US Patent 7,074,680, 2006
Reaction of SO2 with ZnO (0001̄)–O and ZnO powders: photoemission and XANES studies on the formation of SO3 and SO4
JA Rodriguez, T Jirsak, S Chaturvedi, M Kuhn
Surface science 442 (3), 400-412, 1999
Growth, structure and thermal properties of chromium oxide films on Pt (111)
L Zhang, M Kuhn, U Diebold
Surface science 375 (1), 1-12, 1997
The bonding of sulfur to a Pt (111) surface: photoemission and molecular orbital studies
JA Rodriguez, M Kuhn, J Hrbek
Chemical physics letters 251 (1-2), 13-19, 1996
Electronic and Chemical Properties of Ag/Pt (111) and Cu/Pt (111) Surfaces: Importance of Changes in the d Electron Populations
JA Rodriguez, M Kuhn
The Journal of Physical Chemistry 98 (44), 11251-11255, 1994
Interaction of silver, cesium, and zinc with alumina surfaces: thermal desorption and photoemission studies
JA Rodriguez, M Kuhn, J Hrbek
The Journal of Physical Chemistry 100 (46), 18240-18248, 1996
Studies on the Behavior of Mixed-Metal Oxides and Desulfurization:  Reaction of H2S and SO2 with Cr2O3(0001), MgO(100), and CrxMg1-xO(100)
JA Rodriguez, T Jirsak, M Pérez, S Chaturvedi, M Kuhn, L González, ...
Journal of the American Chemical Society 122 (49), 12362-12370, 2000
Chemical and electronic properties of Pt in bimetallic surfaces: Photoemission and CO‐chemisorption studies for Zn/Pt (111)
JA Rodriguez, M Kuhn
The Journal of chemical physics 102 (10), 4279-4289, 1995
Electronic structure of ordered and disordered Cu 3 Au: The behavior of the Au 5d bands
TK Sham, YM Yiu, M Kuhn, KH Tan
Physical Review B 41 (17), 11881, 1990
Method for making a semiconductor device having a metal gate electrode
R Chau, M Doczy, M Kuhn
US Patent 6,890,807, 2005
Interaction of zinc with transition-metal surfaces: electronic and chemical perturbations induced by bimetallic bonding
JA Rodriguez, M Kuhn
The Journal of Physical Chemistry 100 (1), 381-389, 1996
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