Colin Humphreys
TitleCited byYear
Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+ U study
SL Dudarev, GA Botton, SY Savrasov, CJ Humphreys, AP Sutton
Physical Review B 57 (3), 1505, 1998
68131998
Solid-state lighting
CJ Humphreys
MRS bulletin 33 (4), 459-470, 2008
3492008
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
Applied Physics Letters 83 (26), 5419-5421, 2003
2992003
Absorption parameters in electron diffraction theory
PBH CJ Humphreys
Philosophical Magazine 18, 115-122, 1968
2761968
The scattering of fast electrons by crystals
CJ Humphreys
Reports on Progress in Physics 42 (11), 1825, 1979
2701979
Prospects of III-nitride optoelectronics grown on Si
D Zhu, DJ Wallis, CJ Humphreys
Reports on Progress in Physics 76 (10), 106501, 2013
2402013
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
AJ Kenyon, CE Chryssou, CW Pitt, T Shimizu-Iwayama, DE Hole, ...
Journal of Applied Physics 91 (1), 367-374, 2002
2362002
Optical and microstructural studies of single-quantum-well structures
DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ...
Journal of applied physics 97 (10), 103508, 2005
2142005
Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
AN Bright, PJ Thomas, M Weyland, DM Tricker, CJ Humphreys, R Davies
Journal of Applied Physics 89 (6), 3143-3150, 2001
1872001
Critical thickness calculations for InGaN/GaN
D Holec, P Costa, MJ Kappers, CJ Humphreys
Journal of Crystal Growth 303 (1), 314-317, 2007
1852007
Three-dimensional atom probe studies of an multiple quantum well structure: Assessment of possible indium clustering
MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, DJ Stokes, PH Clifton, ...
Applied physics letters 90 (6), 061903, 2007
1742007
Dislocation nucleation near the critical thickness in GeSi/Si strained layers
DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean
Philosophical Magazine A 59 (5), 1059-1073, 1989
1721989
Carrier localization mechanisms in In x Ga 1− x N/GaN quantum wells
D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ...
Physical Review B 83 (11), 115321, 2011
1582011
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, ...
Applied Physics Letters 83 (4), 755-757, 2003
1502003
Chemical mapping and formation of V-defects in InGaN multiple quantum wells
N Sharma, P Thomas, D Tricker, C Humphreys
Applied Physics Letters 77 (9), 1274-1276, 2000
1472000
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
IA Pope, PM Smowton, P Blood, JD Thomson, MJ Kappers, ...
Applied physics letters 82 (17), 2755-2757, 2003
1412003
Dopant profiling with the scanning electron microscope—A study of Si
SL Elliott, RF Broom, CJ Humphreys
Journal of Applied Physics 91 (11), 9116-9122, 2002
1392002
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons
CJHPBH JP Spencer
Philosophical Magazine 26, 193-213, 1972
1381972
Understanding x-ray diffraction of nonpolar gallium nitride films
MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys
Journal of Applied Physics 105 (11), 113501, 2009
1332009
White lines in the ,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals
WG Waddington, P Rez, IP Grant, CJ Humphreys
Physical Review B 34 (3), 1467, 1986
1261986
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Articles 1–20