| The effect of interfacial layer properties on the performance of Hf-based gate stack devices G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ... Journal of Applied Physics 100 (9), 2006 | 196 | 2006 |
| Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility PD Kirsch, MA Quevedo-Lopez, HJ Li, Y Senzaki, JJ Peterson, SC Song, ... Journal of applied physics 99 (2), 2006 | 152 | 2006 |
| High-k gate stacks for planar, scaled CMOS integrated circuits HR Huff, A Hou, C Lim, Y Kim, J Barnett, G Bersuker, GA Brown, ... Microelectronic Engineering 69 (2-4), 152-167, 2003 | 127 | 2003 |
| Imaging local electronic corrugations and doped regions in graphene BJ Schultz, CJ Patridge, V Lee, C Jaye, PS Lysaght, C Smith, J Barnett, ... Nature communications 2 (1), 372, 2011 | 120 | 2011 |
| Conventional n-channel MOSFET devices using single layer HfO/sub 2/and ZrO/sub 2/as high-k gate dielectrics with polysilicon gate electrode Y Kim, G Gebara, M Freiler, J Barnett, D Riley, J Chen, K Torres, JE Lim, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 93 | 2001 |
| Interfacial layer-induced mobility degradation in high-k transistors G Bersuker, J Barnett, N Moumen, B Foran, CD Young, P Lysaght, ... Japanese journal of applied physics 43 (11S), 7899, 2004 | 91 | 2004 |
| Electron trap generation in high-/spl kappa/gate stacks by constant voltage stress CD Young, D Heh, SV Nadkarni, R Choi, JJ Peterson, J Barnett, BH Lee, ... IEEE Transactions on Device and Materials Reliability 6 (2), 123-131, 2006 | 88 | 2006 |
| Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) BH Lee, CD Young, R Choi, JH Sim, G Bersuker, CY Kang, R Harris, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 83 | 2004 |
| Chemical analysis of HfO2∕ Si (100) film systems exposed to NH3 thermal processing PS Lysaght, J Barnett, GI Bersuker, JC Woicik, DA Fischer, B Foran, ... Journal of applied physics 101 (2), 2007 | 77 | 2007 |
| Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme HR Harris, P Kalra, P Majhi, M Hussain, D Kelly, J Oh, D He, C Smith, ... 2007 IEEE Symposium on VLSI Technology, 154-155, 2007 | 72 | 2007 |
| 300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj∼5nm) formed with molecular monolayer doping technique KW Ang, J Barnett, WY Loh, J Huang, BG Min, PY Hung, I Ok, JH Yum, ... 2011 International Electron Devices Meeting, 35.5. 1-35.5. 4, 2011 | 69 | 2011 |
| Highly manufacturable 45nm LSTP CMOSFETs using novel dual high-k and dual metal gate CMOS integration S Song, Z Zhang, M Hussain, C Huffman, J Barnett, S Bae, H Li, P Majhi, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 13-14, 2006 | 54 | 2006 |
| Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow RJW Hill, C Park, J Barnett, J Price, J Huang, N Goel, WY Loh, J Oh, ... 2010 International Electron Devices Meeting, 6.2. 1-6.2. 4, 2010 | 49 | 2010 |
| Oxygen diffusion and reactions in Hf-based dielectrics LV Goncharova, M Dalponte, DG Starodub, T Gustafsson, E Garfunkel, ... Applied Physics Letters 89 (4), 2006 | 45 | 2006 |
| Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy B Foran, J Barnett, PS Lysaght, MP Agustin, S Stemmer Journal of electron spectroscopy and related phenomena 143 (2-3), 149-158, 2005 | 39 | 2005 |
| Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO/sub 2/gate dielectric ZB Zhang, SC Song, C Huffman, J Barnett, N Moumen, H Alshareef, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 50-51, 2005 | 36 | 2005 |
| Metal wet etch process development for dual metal gate CMOS MM Hussain, N Moumen, J Barnett, J Saulters, D Baker, Z Zhang Electrochemical and Solid-State Letters 8 (12), G333, 2005 | 32 | 2005 |
| Integration of dual metal gate CMOS on high-k dielectrics utilizing a metal wet etch process Z Zhang, SC Song, C Huffman, MM Hussain, J Barnett, N Moumen, ... Electrochemical and Solid-State Letters 8 (10), G271, 2005 | 32 | 2005 |
| Subnanometer scaling of HfO2/metal electrode gate stacks JJ Peterson, CD Young, J Barnett, S Gopalan, J Gutt, CH Lee, HJ Li, ... Electrochemical and solid-state letters 7 (8), G164, 2004 | 32 | 2004 |
| Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications SD Park, C Park, DC Gilmer, HK Park, CY Kang, KY Lim, C Burham, ... Applied Physics Letters 95 (2), 2009 | 31 | 2009 |
