A fast modeling of the double-diode model for PV modules using combined analytical and numerical approach A Yahya-Khotbehsara, A Shahhoseini Solar Energy 162, 403-409, 2018 | 129 | 2018 |
A new method on designing and simulating CNTFET_based ternary gates and arithmetic circuits H Samadi, A Shahhoseini, F Agaei-Liavali Microelectronics Journal 63, 41-48, 2017 | 72 | 2017 |
Negative differential resistance and rectification effects in zigzag graphene nanoribbon heterojunctions: induced by edge oxidation and symmetry concept M Nazirfakhr, A Shahhoseini Physics Letters A 382 (10), 704-709, 2018 | 20 | 2018 |
Direct current (DC) microgrid control in the presence of electrical vehicle/photovoltaic (EV/PV) systems and hybrid energy storage systems: A Case study of grounding and … B Taheri, A Shahhoseini IET Generation, Transmission & Distribution 17 (13), 3084-3099, 2023 | 11 | 2023 |
Using Molybdenum Trioxide as a TCO Layer to Improve Performance of CdTe/CdS Thin-film Solar Cell B Mozafari, A Shahhoseini Signal processing and Renewable Energy 4 (3), 57-65, 2020 | 9 | 2020 |
The vacancy defect in graphene nano-ribbon field-effect transistor in the presence of an external perpendicular magnetic field S Bahrami, A Shahhoseini Microsystem Technologies Microsystem Technologies, 2015 | 9 | 2015 |
Using superlattice structure in the source of GNRFET to improve its switching performance B Behtoee, R Faez, A Shahhoseini, MK Moravvej-Farshi IEEE Transactions on Electron Devices 67 (3), 1334-1339, 2020 | 8 | 2020 |
A fast and accurate five parameters double-diode model of photovoltaic modules AY Khotbehsara, A Shahhoseini 2017 Iranian Conference on Electrical Engineering (ICEE), 265-270, 2017 | 7 | 2017 |
Performance analysis of junctionless carbon nanotube field effect transistors using NEGF formalism S Barbastegan, A Shahhoseini Modern Physics Letters B 30 (10), 1650125, 2016 | 7 | 2016 |
The non-equilibrium Green's function (NEGF) simulation of nanoscale lightly doped drain and source double gate MOSFETs Z Rajabi, A Shahhoseini, R Faez 2012 International Conference on Devices, Circuits and Systems (ICDCS), 25-28, 2012 | 6 | 2012 |
Local impact of Stone–Wales defect on a single layer GNRFET H Shamloo, A Nazari, R Faez, A Shahhoseini Physics Letters A 384 (7), 126170, 2020 | 5 | 2020 |
Analysis of a 3–5 GHz UWB CMOS low-noise amplifier for wireless applications B Ansari, H Shamsi, A Shahhoseini 2009 52nd IEEE International Midwest Symposium on Circuits and Systems, 979-982, 2009 | 4 | 2009 |
Hydrogenated fluorinated microcrystalline silicon oxide (µc-SiO: F: H): a new material for the emitter layer of HIT solar cells H Delavaran, A Shahhoseini 2019 27th Iranian Conference on Electrical Engineering (ICEE), 36-40, 2019 | 3 | 2019 |
Electrical conductance of telescoping double-walled carbon nanotubes with Stone-Wales and monovacancy defects E Aghabararian, A Shahhoseini 5th International Congress on Nanoscience & Nanotechnology (ICNN2014) , 2014 | 3 | 2014 |
Techno-Economic Study and Sensitivity Analysis of an On-Grid Photovoltaic-Battery-Diesel Hybrid System Under Blackouts Conditions: A Case Study on an Industrial Unit in Iran A Shahhoseini, A Azimi-Shaghaghi, S Yazdanipour Available at SSRN 4017462, 2022 | 2 | 2022 |
Investigating the Role of Niobium Pentoxide as Transparent Conductive Oxide layer on the Efficiency of Thin Film Amorphous Silicon Solar Cell M Afzali, A Shahhoseini, H Keshvari 2019 27th Iranian Conference on Electrical Engineering (ICEE), 54-59, 2019 | 2 | 2019 |
Design, Simulation and Sensitivity Analysis of an Off-grid Hybrid System based on Renewable Energies for a Rural Area in Iran M Ghorbanzadeh, A Shahhoseini 1st IEEE International Conference on Power Electronics, Intelligent Control …, 2016 | 2 | 2016 |
Stability Improvement and consumption power of CNTFET-based ternary memory ell R Azhari, A Shahhoseini, F Aghaei-liavali submitted to 2015 IEEE International Conference on Research in Computational …, 2015 | 2 | 2015 |
Detemining the Thickness of Barriers and Well of Resonance Tunneling Diodes by Specified IV Characteristic A Shahhoseini, S Ghorbanalipour, R Faez Applied Mechanics and Materials 110, 5464-5470, 2012 | 2 | 2012 |
An Analytic Model for Kink Effect in IV Characteristics of Single Electron Transistors ALI SHAHHOSSEINI, K Saghafi, FMK MORAVEJ, R Faez Iranian Journal of Electrical and Electronic Engineering 5 (4), 234-243, 2009 | 2 | 2009 |