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Abdelmajid Salhi
Abdelmajid Salhi
HBKU Core Labs
Verified email at hbku.edu.qa
Title
Cited by
Cited by
Year
Abundant non-toxic materials for thin film solar cells: Alternative to conventional materials
F Alharbi, JD Bass, A Salhi, A Alyamani, HC Kim, RD Miller
Renewable Energy 36 (10), 2753-2758, 2011
1512011
Looking into the volcano with a Mid-IR DFB diode laser and Cavity Enhanced Absorption Spectroscopy
S Kassi, M Chenevier, L Gianfrani, A Salhi, Y Rouillard, A Ouvrard, ...
Optics Express 14 (23), 11442-11452, 2006
752006
Fabrication of force sensors based on two-dimensional photonic crystal technology
T Stomeo, M Grande, A Qualtieri, A Passaseo, A Salhi, M De Vittorio, ...
Microelectronic Engineering 84 (5-8), 1450-1453, 2007
742007
Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm
A Salhi, Y Rouillard, A Perona, P Grech, M Garcia, C Sirtori
Semiconductor science and technology 19 (2), 260, 2003
642003
Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 μm
K O’Brien, SJ Sweeney, AR Adams, BN Murdin, A Salhi, Y Rouillard, ...
Applied Physics Letters 89 (5), 2006
592006
Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers
M Mattiello, M Nikles, S Schilt, L Thévenaz, A Salhi, D Barat, A Vicet, ...
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 63 (5 …, 2006
512006
Single-frequency Sb-based distributed-feedback lasers emitting at 2.3 μm above room temperature for application in tunable diode laser absorption spectroscopy
A Salhi, D Barat, D Romanini, Y Rouillard, A Ouvrard, R Werner, J Seufert, ...
Applied optics 45 (20), 4957-4965, 2006
482006
Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime
A Salhi, Y Rouillard, J Angellier, M Garcia
IEEE photonics technology letters 16 (11), 2424-2426, 2004
472004
Phase-locked mutually coupled 1.3 μm quantum-dot lasers
SP Hegarty, D Goulding, B Kelleher, G Huyet, MT Todaro, A Salhi, ...
Optics letters 32 (22), 3245-3247, 2007
422007
Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
M Garcia, A Salhi, A Perona, Y Rouillard, C Sirtori, X Marcadet, C Alibert
IEEE Photonics Technology Letters 16 (5), 1253-1255, 2004
422004
Enhanced Performances of Quantum Dot Lasers Operating at 1.3 m
A Salhi, G Raino, L Fortunato, V Tasco, G Visimberga, L Martiradonna, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1188-1196, 2008
412008
High-modal gain 1300-nm In (Ga) As-GaAs quantum-dot lasers
A Salhi, L Martiradonna, G Visimberga, V Tasco, L Fortunato, MT Todaro, ...
IEEE photonics technology letters 18 (16), 1735-1737, 2006
402006
3-d fem modeling and fabrication of circular photonic crystal microcavity
A Massaro, V Errico, T Stomeo, R Cingolani, A Salhi, A Passaseo, ...
Journal of lightwave technology 26 (16), 2960-2968, 2008
372008
Application of antimonide diode lasers in photoacoustic spectroscopy
S Schilt, A Vicet, R Werner, M Mattiello, L Thévenaz, A Salhi, Y Rouillard, ...
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 60 (14 …, 2004
372004
Pressure-tuned InGaAsSb∕ AlGaAsSb diode laser with 700nm tuning range
P Adamiec, A Salhi, R Bohdan, A Bercha, F Dybala, W Trzeciakowski, ...
Applied physics letters 85 (19), 4292-4294, 2004
372004
A molecular precursor route to quaternary chalcogenide CFTS (Cu 2 FeSnS 4) powders as potential solar absorber materials
AM Alanazi, F Alam, A Salhi, M Missous, AG Thomas, P O'Brien, DJ Lewis
RSC advances 9 (42), 24146-24153, 2019
332019
High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm
A Salhi, L Fortunato, L Martiradonna, MT Todaro, R Cingolani, ...
Semiconductor science and technology 22 (4), 396, 2007
332007
Enhanced modal gain of multilayer InAs∕ InGaAs∕ GaAs quantum dot lasers emitting at 1300nm
A Salhi, L Fortunato, L Martiradonna, R Cingolani, M De Vittorio, ...
Journal of applied physics 100 (12), 2006
332006
High-Performance Directly Modulated 1.3-m Undoped InAs–InGaAs Quantum-Dot Lasers
MT Todaro, A Salhi, L Fortunato, R Cingolani, A Passaseo, M De Vittorio, ...
IEEE Photonics Technology Letters 19 (4), 191-193, 2007
322007
Role of charge separation on two-step two photon absorption in InAs/GaAs quantum dot intermediate band solar cells
A Creti, V Tasco, A Cola, G Montagna, I Tarantini, A Salhi, A Al-Muhanna, ...
Applied Physics Letters 108 (6), 2016
302016
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