T.M. Smeeton
T.M. Smeeton
R&D Manager, SHARP Laboratories of Europe, Oxford, UK
Verified email at sharp.co.uk - Homepage
TitleCited byYear
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
Applied Physics Letters 83 (26), 5419-5421, 2003
2912003
Optical and microstructural studies of single-quantum-well structures
DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ...
Journal of applied physics 97 (10), 103508, 2005
2092005
Modular roof covering system
W McDonough, M Braungart, PJ Clark
US Patent 6,606,823, 2003
1132003
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
ME Vickers, MJ Kappers, TM Smeeton, EJ Thrush, JS Barnard, ...
Journal of applied physics 94 (3), 1565-1574, 2003
1122003
In-plane imperfections in GaN studied by x-ray diffraction
ME Vickers, MJ Kappers, R Datta, C McAleese, TM Smeeton, ...
Journal of Physics D: Applied Physics 38 (10A), A99, 2005
932005
Design of a creep resistant nickel base superalloy for power plant applications: Part 1-Mechanical properties modelling
F Tancret, H Bhadeshia, DJC MacKay
Materials Science and Technology 19 (3), 283-290, 2003
622003
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy.
TM Smeeton, CJ Humphreys, JS Barnard, MJ Kappers
Journal of materials science 41 (9), 2006
542006
Strong carrier confinement in In x Ga 1− x N∕ Ga N quantum dots grown by molecular beam epitaxy
M Sénès, KL Smith, TM Smeeton, SE Hooper, J Heffernan
Physical Review B 75 (4), 045314, 2007
442007
Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
M Kauer, SE Hooper, V Bousquet, K Johnson, C Zellweger, JM Barnes, ...
Electronics Letters 41 (13), 739-741, 2005
352005
Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
physica status solidi (b) 240 (2), 297-300, 2003
342003
Design of a creep resistant nickel base superalloy for power plant applications: Part 3-Experimental results
F Tancret, T Sourmail, MA Yescas, RW Evans, C McAleese, L Singh, ...
Materials Science and Technology 19 (3), 296-302, 2003
342003
Degradation of laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings
M Rossetti, TM Smeeton, WS Tan, M Kauer, SE Hooper, J Heffernan, ...
Applied Physics Letters 92 (15), 151110, 2008
302008
Semiconductor device and a method of manufacture thereof
TM Smeeton, KL Smith, MX Sénès, SE Hooper
US Patent 8,334,157, 2012
212012
AlInGaN light-emitting device
KL Smith, MX Sénès, TM Smeeton, SE Hooper
US Patent 7,858,962, 2010
152010
Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy
SE Bennett, TM Smeeton, DW Saxey, GDW Smith, SE Hooper, ...
Journal of Applied Physics 111 (5), 053508, 2012
122012
Ultraviolet treatment device
TM Smeeton, EA Boardman, SE Hooper
US Patent App. 13/651,803, 2014
112014
High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy
WS Tan, M Kauer, SE Hooper, JM Barnes, M Rossetti, TM Smeeton, ...
Electronics Letters 44 (5), 351-353, 2008
112008
Fuel injection control system and method
DR Puckett
US Patent 6,705,290, 2004
112004
Continuous-wave operation of monolithic two-mode optical flip-flop with etched laser mirrors
BB Jian
Electronics Letters 32 (20), 1923-1925, 1996
111996
Ultraviolet laser
T Smeeton, S Hooper, EA Boardman, RM Cole
US Patent 8,743,922, 2014
92014
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Articles 1–20