Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites MI Dar, G Jacopin, S Meloni, A Mattoni, N Arora, A Boziki, ... Science advances 2 (10), e1601156, 2016 | 370 | 2016 |
Triazatruxene-based hole transporting materials for highly efficient perovskite solar cells K Rakstys, A Abate, MI Dar, P Gao, V Jankauskas, G Jacopin, ... Journal of the American Chemical Society 137 (51), 16172-16178, 2015 | 369 | 2015 |
M-plane core–shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices R Koester, JS Hwang, D Salomon, X Chen, C Bougerol, JP Barnes, ... Nano letters 11 (11), 4839-4845, 2011 | 236 | 2011 |
Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure LF Zagonel, S Mazzucco, M Tencé, K March, R Bernard, B Laslier, ... Nano letters 11 (2), 568-573, 2011 | 228 | 2011 |
InGaN/GaN core–shell single nanowire light emitting diodes with graphene-based p-contact M Tchernycheva, P Lavenus, H Zhang, AV Babichev, G Jacopin, ... Nano letters 14 (5), 2456-2465, 2014 | 216 | 2014 |
Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors M Tchernycheva, A Messanvi, A de Luna Bugallo, G Jacopin, P Lavenus, ... Nano letters 14 (6), 3515-3520, 2014 | 204 | 2014 |
Ultraviolet Photodetector Based on GaN/AlN Quantum Discs in a Single Nanowire. L Rigutti, M Tchernycheva, A De Luna Bugallo, G Jacopin, FH Julien, ... Nano Letters 10 (10), 2010 | 200 | 2010 |
A novel dopant‐free triphenylamine based molecular “butterfly” hole‐transport material for highly efficient and stable perovskite solar cells F Zhang, C Yi, P Wei, X Bi, J Luo, G Jacopin, S Wang, X Li, Y Xiao, ... Advanced Energy Materials 6 (14), 1600401, 2016 | 191 | 2016 |
Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact H Zhang, AV Babichev, G Jacopin, P Lavenus, FH Julien, A Yu Egorov, ... Journal of Applied Physics 114 (23), 2013 | 132 | 2013 |
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency C Haller, JF Carlin, G Jacopin, D Martin, R Butté, N Grandjean Applied Physics Letters 111 (26), 2017 | 131 | 2017 |
Intrinsic and extrinsic stability of formamidinium lead bromide perovskite solar cells yielding high photovoltage N Arora, MI Dar, M Abdi-Jalebi, F Giordano, N Pellet, G Jacopin, ... Nano letters 16 (11), 7155-7162, 2016 | 124 | 2016 |
High open-circuit voltage: Fabrication of formamidinium lead bromide perovskite solar cells using fluorene–dithiophene derivatives as hole-transporting materials N Arora, S Orlandi, MI Dar, S Aghazada, G Jacopin, M Cavazzini, ... ACS Energy Letters 1 (1), 107-112, 2016 | 122 | 2016 |
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells C Haller, JF Carlin, G Jacopin, W Liu, D Martin, R Butté, N Grandjean Applied Physics Letters 113 (11), 2018 | 115 | 2018 |
Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles A de Luna Bugallo, M Tchernycheva, G Jacopin, L Rigutti, FH Julien, ... Nanotechnology 21 (31), 315201, 2010 | 102 | 2010 |
Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires G Jacopin, L Rigutti, L Largeau, F Fortuna, F Furtmayr, FH Julien, ... Journal of Applied Physics 110 (6), 2011 | 89 | 2011 |
Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping M Tchernycheva, V Neplokh, H Zhang, P Lavenus, L Rigutti, F Bayle, ... Nanoscale 7 (27), 11692-11701, 2015 | 86 | 2015 |
Correlation of optical and structural properties of GaN/AlN core-shell nanowires L Rigutti, G Jacopin, L Largeau, E Galopin, ADL Bugallo, FH Julien, ... Physical Review B 83 (15), 155320, 2011 | 76 | 2011 |
Photovoltaic and amplified spontaneous emission studies of high‐quality formamidinium lead bromide perovskite films N Arora, MI Dar, M Hezam, W Tress, G Jacopin, T Moehl, P Gao, ... Advanced Functional Materials 26 (17), 2846-2854, 2016 | 75 | 2016 |
Exciton drift in semiconductors under uniform strain gradients: Application to bent ZnO microwires X Fu, G Jacopin, M Shahmohammadi, R Liu, M Benameur, JD Ganiere, ... ACS nano 8 (4), 3412-3420, 2014 | 75 | 2014 |
Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy A Bugallo, L Rigutti, G Jacopin, FH Julien, C Durand, XJ Chen, ... Applied Physics Letters 98 (23), 2011 | 75 | 2011 |