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Thierry Baron
Thierry Baron
CNRS, Université Grenoble Alpes
Verified email at cea.fr
Title
Cited by
Cited by
Year
Size effects in mechanical deformation and fracture of cantilevered silicon nanowires
MJ Gordon, T Baron, F Dhalluin, P Gentile, P Ferret
Nano letters 9 (2), 525-529, 2009
2212009
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ...
IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001
1772001
Laser diodes based on beryllium-chalcogenides
A Waag, F Fischer, K Schüll, T Baron, HJ Lugauer, T Litz, U Zehnder, ...
Applied physics letters 70 (3), 280-282, 1997
1701997
Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications
M Kanoun, A Souifi, T Baron, F Mazen
Applied Physics Letters 84 (25), 5079-5081, 2004
1572004
Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility
R Alcotte, M Martin, J Moeyaert, R Cipro, S David, F Bassani, F Ducroquet, ...
Apl Materials 4 (4), 2016
1442016
Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales
C Sire, S Blonkowski, MJ Gordon, T Baron
Applied Physics Letters 91 (24), 2007
1442007
Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices
T Baron, F Martin, P Mur, C Wyon, M Dupuy
Journal of crystal growth 209 (4), 1004-1008, 2000
1442000
Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates
S Chen, M Liao, M Tang, J Wu, M Martin, T Baron, A Seeds, H Liu
Optics express 25 (5), 4632-4639, 2017
1392017
Control of gold surface diffusion on Si nanowires
MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ...
Nano letters 8 (5), 1544-1550, 2008
1372008
Chemical vapor deposition of Ge nanocrystals on
T Baron, B Pelissier, L Perniola, F Mazen, JM Hartmann, G Rolland
Applied Physics Letters 83 (7), 1444-1446, 2003
1302003
Single-electron charging effect in individual Si nanocrystals
T Baron, P Gentile, N Magnea, P Mur
Applied physics letters 79 (8), 1175-1177, 2001
1212001
Novel beryllium containing II–VI compounds: basic properties and potential applications
A Waag, T Litz, F Fischer, HJ Lugauer, T Baron, K Schüll, U Zehnder, ...
Journal of crystal growth 184, 1-10, 1998
1151998
How far will silicon nanocrystals push the scaling limits of NVMs technologies?
B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
1142003
Silicon nanocrystal memories
S Lombardo, B De Salvo, C Gerardi, T Baron
Microelectronic Engineering 72 (1-4), 388-394, 2004
1112004
Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy
P Tsipas, D Tsoutsou, S Fragkos, R Sant, C Alvarez, H Okuno, G Renaud, ...
ACS nano 12 (2), 1696-1703, 2018
1092018
Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication
S Decossas, F Mazen, T Baron, G Brémond, A Souifi
Nanotechnology 14 (12), 1272, 2003
1072003
Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)
B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ...
IEEE Transactions on Device and Materials reliability 4 (3), 377-389, 2004
1042004
Toward a reliable chipless RFID humidity sensor tag based on silicon nanowires
A Vena, E Perret, D Kaddour, T Baron
IEEE Transactions on Microwave Theory and Techniques 64 (9), 2977-2985, 2016
1022016
Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy
T Baron, K Saminadayar, N Magnea
Journal of applied physics 83 (3), 1354-1370, 1998
1001998
A group-delay-based chipless RFID humidity tag sensor using silicon nanowires
RS Nair, E Perret, S Tedjini, T Baron
IEEE Antennas and Wireless Propagation Letters 12, 729-732, 2013
952013
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