| A survey of wide bandgap power semiconductor devices J Millan, P Godignon, X Perpiñà, A Pérez-Tomás, J Rebollo IEEE transactions on Power Electronics 29 (5), 2155-2163, 2013 | 1282 | 2013 |
| Inhibiting the absorber/Mo-back contact decomposition reaction in Cu 2 ZnSnSe 4 solar cells: the role of a ZnO intermediate nanolayer S López-Marino, M Placidi, A Pérez-Tomás, J Llobet, V Izquierdo-Roca, ... Journal of Materials Chemistry A 1 (29), 8338-8343, 2013 | 157 | 2013 |
| Field-effect mobility temperature modeling of metal-oxide-semiconductor transistors A Pérez-Tomás, P Brosselard, P Godignon, J Millán, N Mestres, ... Journal of applied physics 100 (11), 114508, 2006 | 109 | 2006 |
| Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes R Pérez, D Tournier, A Pérez-Tomás, P Godignon, N Mestres, J Millán IEEE Transactions on Electron Devices 52 (10), 2309-2316, 2005 | 95 | 2005 |
| P-type β-gallium oxide: A new perspective for power and optoelectronic devices E Chikoidze, A Fellous, A Perez-Tomas, G Sauthier, T Tchelidze, ... Materials Today Physics 3, 118-126, 2017 | 90 | 2017 |
| Multiwavelength excitation Raman scattering analysis of bulk and two-dimensional MoS2: vibrational properties of atomically thin MoS2 layers M Placidi, M Dimitrievska, V Izquierdo-Roca, X Fontané, ... 2D Materials 2 (3), 035006, 2015 | 70 | 2015 |
| Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 223704, 2013 | 68 | 2013 |
| A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface A Pérez-Tomás, P Godignon, N Mestres, J Millán Microelectronic engineering 83 (3), 440-445, 2006 | 63 | 2006 |
| Performance and stability of mixed FAPbI3 (0.85) MAPbBr3 (0.15) halide perovskite solar cells under outdoor conditions and the effect of low light irradiation Y Reyna, M Salado, S Kazim, A Pérez-Tomas, S Ahmad, M Lira-Cantu Nano Energy 30, 570-579, 2016 | 61 | 2016 |
| Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates A Pérez-Tomás, A Fontserè, J Llobet, M Placidi, S Rennesson, N Baron, ... Journal of Applied Physics 113 (17), 174501, 2013 | 61 | 2013 |
| GaN transistor characteristics at elevated temperatures A Pérez-Tomás, M Placidi, N Baron, S Chenot, Y Cordier, JC Moreno, ... Journal of Applied Physics 106 (7), 074519, 2009 | 60 | 2009 |
| Characterization and modeling of heterojunction diodes A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ... Journal of applied physics 102 (1), 014505, 2007 | 55 | 2007 |
| Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Applied Physics Letters 99 (21), 213504, 2011 | 49 | 2011 |
| Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC MR Jennings, A Pérez-Tomás, M Davies, D Walker, L Zhu, P Losee, ... Solid-state electronics 51 (5), 797-801, 2007 | 43 | 2007 |
| GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling A Pérez-Tomás, M Placidi, X Perpiñà, A Constant, P Godignon, X Jordà, ... Journal of Applied Physics 105 (11), 114510, 2009 | 41 | 2009 |
| Wide band gap semiconductor devices for power electronics J Millán, P Godignon, A Pérez-Tomás Automatika: časopis za automatiku, mjerenje, elektroniku, računarstvo i …, 2012 | 36 | 2012 |
| Si∕ SiC heterojunctions fabricated by direct wafer bonding MR Jennings, A Pérez-Tomás, OJ Guy, R Hammond, SE Burrows, ... Electrochemical and Solid State Letters 11 (11), H306, 2008 | 34 | 2008 |
| Schottky versus bipolar 3.3 kV SiC diodes A Pérez-Tomás, P Brosselard, J Hassan, X Jorda, P Godignon, M Placidi, ... Semiconductor Science and Technology 23 (12), 125004, 2008 | 33 | 2008 |
| Metal oxides in photovoltaics: all-oxide, ferroic, and perovskite solar cells A Pérez-Tomás, A Mingorance, D Tanenbaum, M Lira-Cantú The future of semiconductor oxides in next-generation solar cells, 267-356, 2018 | 31 | 2018 |
| Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN M Placidi, A Pérez-Tomás, A Constant, G Rius, N Mestres, J Millán, ... Applied surface science 255 (12), 6057-6060, 2009 | 30 | 2009 |
