| Advantages of AlGaN-based 310-nm UV light-emitting diodes with Al content graded AlGaN electron blocking layers Y Li, S Chen, W Tian, Z Wu, Y Fang, J Dai, C Chen IEEE Photonics Journal 5 (4), 8200309-8200309, 2013 | 64 | 2013 |
| Surface Plasmon Enhanced Hot Exciton Emission in Deep UV‐Emitting AlGaN Multiple Quantum Wells J Yin, Y Li, S Chen, J Li, J Kang, W Li, P Jin, Y Chen, Z Wu, J Dai, Y Fang, ... Advanced Optical Materials 2 (5), 451-458, 2014 | 38 | 2014 |
| Defect reduction in Si-doped Al0. 45Ga0. 55N films by SiNx interlayer method Y Li, S Chen, M Kong, S Li, W Tian, S Sun, Z Wu, Y Fang, J Dai, C Chen Journal of Applied Physics 115 (4), 2014 | 9 | 2014 |
| Improved Performance of GaN-Based Light-Emitting Diodes via AlInGaN/InGaN Electron-Emitting Layer J Zhang, Z Wu, Y Li, J Xu, W Zhang, H Xiong, Y Tian, J Dai, Y Fang, ... Applied Physics Express 5 (11), 112101, 2012 | 2 | 2012 |
| High quality Si doped Al0. 49Ga0. 51N grown on AlN/AlGaN superlattice with MOCVD Y LI, S CHEN, Y FANG, S LI, W TIAN, J DAI, Z WU, C CHEN | | 2013 |
| Growth of High Quality AlN on Sapphire with Multi-Growth Approaches Y Li, SC Chen, W Tian, SL Li, H Wang, J Zhang, ZH Wu, YY Fang, JN Dai, ... Information Optoelectronics, Nanofabrication and Testing, ITh4A. 06, 2012 | | 2012 |
