| Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate SK Ray, CK Maiti, SK Lahiri, NB Chakrabarti Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 125 | 1992 |
| Strained silicon heterostructures: materials and devices CK Maiti, NB Chakrabarti, SK Ray IET, 2001 | 118 | 2001 |
| Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field CK Maiti, LK Bera, SS Dey, DK Nayak, NB Chakrabarti Solid-State Electronics 41 (12), 1863-1869, 1997 | 90 | 1997 |
| TEOS‐based PECVD of silicon dioxide for VLSI applications SK Ray, CK Maiti, SK Lahiri, NB Chakrabarti Advanced materials for optics and electronics 6 (2), 73-82, 1996 | 70 | 1996 |
| Fluorine‐enhanced nitridation of silicon at low temperatures in a microwave plasma SK Ray, CK Maiti, NB Chakrabarti Journal of applied physics 70 (3), 1874-1876, 1991 | 32 | 1991 |
| Strained silicon-SiGe devices using germanium implantation S Kal, NB Chakrabarti IETE Journal of Research 43 (2-3), 185-192, 1997 | 29 | 1997 |
| Low-Temperature deposition of dielectric films by microwave plasma enhanced decomposition of hexamethyldisilazane SK Ray, CK Maiti, NB Chakrabarti Journal of electronic materials 20, 907-913, 1991 | 16 | 1991 |
| Silicon heterostructure devices for RF wireless communication B Senapati, CK Maiti, NB Chakrabarti VLSI Design 2000. Wireless and Digital Imaging in the Millennium …, 2000 | 15 | 2000 |
| Locking phenomena in phase locked oscillators NB Chakrabarti, BN Biswas Indian Journal of Physics 38, 148-173, 1964 | 15 | 1964 |
| Noise sensitivity of Teager-Kaiser energy operators and their ratios PK Banerjee, NB Chakrabarti 2015 International Conference on Advances in Computing, Communications and …, 2015 | 14 | 2015 |
| Design and performance analysis of code families for multi-dimensional optical CDMA MR Kumar, SS Pathak, NB Chakrabarti IET communications 3 (8), 1311-1320, 2009 | 13 | 2009 |
| Estimation of hole mobility in strained Si1− xGex buried channel heterostructure PMOSFET GS Kar, SK Ray, T Kim, SK Banerjee, NB Chakrabarti Solid-State Electronics 45 (5), 669-676, 2001 | 13 | 2001 |
| Electrical properties of silicon dioxide deposited at low temperature by metal-organic microwave plasma CVD technique SK Ray, CK Maiti, NB Chakrabarti electronics letters 14 (26), 1082-1083, 1990 | 13 | 1990 |
| Growth of Silicon-Germanium Alloy Layers. CK Maiti, LK Bera, S Maikap, SK Ray, NB Chakrabarti, R Kesavan, ... Defence Science Journal 50 (3), 299, 2000 | 12 | 2000 |
| Deposition of composition‐controlled silicon oxynitride films by dual ion beam sputtering SK Ray, S Das, CK Maiti, SK Lahiri, NB Chakrabarti Applied physics letters 58 (22), 2476-2478, 1991 | 12 | 1991 |
| Design and analysis of three-dimensional OCDMA code families MR Kumar, SS Pathak, NB Chakrabarti Optical Switching and Networking 6 (4), 243-249, 2009 | 11 | 2009 |
| Construction and generation of OCDMA code families using a complete row-wise orthogonal pairs algorithm MR Kumar, P Ganguly, SS Pathak, NB Chakrabarti AEU-International Journal of Electronics and Communications 67 (10), 868-874, 2013 | 9 | 2013 |
| A new multi wavelength—Optical Code Division Multiple Access code design based on Balanced Incomplete Block Design MR Kumar, SS Pathaky, NB Chakrabarti 2007 International Conference on Industrial and Information Systems, 163-168, 2007 | 9 | 2007 |
| GaAs integrated circuits NB Chakrabarti IETE Journal of Research 38 (2-3), 163-178, 1992 | 8 | 1992 |
| Gain and frequency response of a graded-base heterojunction bipolar phototransistor BC Roy, NB Chakrabarti IEEE transactions on electron devices 34 (7), 1482-1490, 1987 | 8 | 1987 |
Samit K RayDepartment of Physics, IIT KharagpurVerified email at phy.iitkgp.ac.in
