Francesco Maria Puglisi
Francesco Maria Puglisi
Associate Professor of Electronics, Università di Modena e Reggio Emilia
Verified email at unimore.it
TitleCited byYear
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced Functional Materials 27 (10), 1604811, 2017
742017
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
L Larcher, FM Puglisi, P Pavan, A Padovani, L Vandelli, G Bersuker
IEEE Transactions on Electron Devices 61 (8), 2668-2673, 2014
662014
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
642019
An empirical model for RRAM resistance in low-and high-resistance states
FM Puglisi, L Larcher, G Bersuker, A Padovani, P Pavan
IEEE Electron Device Letters 34 (3), 387-389, 2013
642013
A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State
FM Puglisi, L Larcher, A Padovani, P Pavan
IEEE Transactions on Electron Devices 62 (8), 2606-2613, 2015
462015
RTS noise characterization of HfOx RRAM in high resistive state
FM Puglisi, P Pavan, A Padovani, L Larcher, G Bersuker
Solid-State Electronics 84, 160-166, 2013
442013
Advances in non-volatile memory and storage technology
Y Nishi, B Magyari-Kope
Woodhead Publishing, 2019
382019
Random telegraph signal noise properties of HfOx RRAM in high resistive state
FM Puglisi, P Pavan, A Padovani, L Larcher, G Bersuker
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
312012
A microscopic physical description of RTN current fluctuations in HfOx RRAM
FM Puglisi, P Pavan, L Vandelli, A Padovani, M Bertocchi, L Larcher
2015 IEEE International Reliability Physics Symposium, 5B. 5.1-5B. 5.6, 2015
282015
A compact model of hafnium-oxide-based resistive random access memory
FM Puglisi, P Pavan, A Padovani, L Larcher
Proceedings of 2013 International Conference on IC Design & Technology …, 2013
282013
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM
FM Puglisi, P Pavan
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International …, 2013
282013
Factorial hidden Markov model analysis of random telegraph noise in resistive random access memories
FM Puglisi, P Pavan
ECTI Transactions on Electrical Engineering, Electronics, and Communications …, 2014
262014
2D h-BN based RRAM devices
FM Puglisi, L Larcher, C Pan, N Xiao, Y Shi, F Hui, M Lanza
2016 IEEE International Electron Devices Meeting (IEDM), 34.8. 1-34.8. 4, 2016
232016
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability
FM Puglisi, L Larcher, P Pavan, A Padovani, G Bersuker
2014 IEEE International Reliability Physics Symposium, MY. 5.1-MY. 5.5, 2014
212014
Bipolar Resistive RAM Based on : Physics, Compact Modeling, and Variability Control
FM Puglisi, L Larcher, A Padovani, P Pavan
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016
182016
Temperature Impact on the Reset Operation in HfO2 RRAM
FM Puglisi, A Qafa, P Pavan
IEEE Electron Device Letters 36 (3), 244-246, 2015
182015
A study on HfO2 RRAM in HRS based on I–V and RTN analysis
FM Puglisi, P Pavan, A Padovani, L Larcher
Solid-State Electronics 102, 69-75, 2014
172014
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM
FM Puglisi, C Wenger, P Pavan
IEEE Electron Device Letters 36 (10), 1030-1032, 2015
162015
Progresses in modeling HfOx RRAM operations and variability
L Larcher, O Pirrotta, FM Puglisi, A Padovani, P Pavan, L Vandelli
ECS Transactions 64 (14), 49-60, 2014
152014
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS
FM Puglisi, P Pavan, L Larcher, A Padovani
2014 44th European Solid State Device Research Conference (ESSDERC), 246-249, 2014
142014
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