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ALESSIO GRIFFONI
ALESSIO GRIFFONI
DeLonghi Group
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Year
Radiation effects in advanced multiple gate and silicon-on-insulator transistors
E Simoen, M Gaillardin, P Paillet, RA Reed, RD Schrimpf, ML Alles, ...
IEEE Transactions on Nuclear Science 60 (3), 1970-1991, 2013
1472013
Laser-and heavy ion-induced charge collection in bulk FinFETs
F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011
902011
Neutron-induced failure in silicon IGBTs, silicon super-junction and SiC MOSFETs
A Griffoni, J van Duivenbode, D Linten, E Simoen, P Rech, L Dilillo, ...
IEEE Transactions on Nuclear Science 59 (4), 866-871, 2012
522012
Next generation bulk FinFET devices and their benefits for ESD robustness
A Griffoni, S Thijs, C Russ, D Trémouilles, D Linten, M Scholz, N Collaert, ...
2009 31st EOS/ESD Symposium, 1-10, 2009
322009
HBM ESD robustness of GaN-on-Si Schottky diodes
SH Chen, A Griffoni, P Srivastava, D Linten, S Thijs, M Scholz, M Denis, ...
IEEE Transactions on Device and Materials Reliability 12 (4), 589-598, 2012
282012
HBM ESD robustness of GaN-on-Si Schottky diodes
SH Chen, A Griffoni, P Srivastava, D Linten, S Thijs, M Scholz, M Denis, ...
IEEE Transactions on Device and Materials Reliability 12 (4), 589-598, 2012
282012
On gated diodes for ESD protection in bulk FinFET CMOS technology
S Thijs, A Griffoni, D Linten, SH Chen, T Hoffmann, G Groeseneken
EOS/ESD Symposium Proceedings, 1-8, 2011
282011
Neutron-induced soft errors in graphic processing units
P Rech, C Aguiar, R Ferreira, M Silvestri, A Griffoni, C Frost, L Carro
2012 IEEE Radiation Effects Data Workshop, 1-6, 2012
262012
Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates
D Kobayashi, E Simoen, S Put, A Griffoni, M Poizat, K Hirose, C Claeys
IEEE Transactions on Nuclear Science 58 (3), 800-807, 2011
252011
Impact of back-gate bias and device geometry on the total ionizing dose response of 1-transistor floating body RAMs
NN Mahatme, EX Zhang, RA Reed, BL Bhuva, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 59 (6), 2966-2973, 2012
242012
Design methodology of FinFET devices that meet IC-Level HBM ESD targets
S Thijs, C Russ, D Tremouilles, A Griffoni, D Linten, M Scholz, N Collaert, ...
EOS/ESD 2008-2008 30th Electrical Overstress/Electrostatic Discharge …, 2008
242008
Neutron-induced multiple bit upsets on two commercial SRAMs under dynamic-stress
P Rech, JM Galliere, P Girard, A Griffoni, J Boch, F Wrobel, F Saigné, ...
IEEE Transactions on Nuclear Science 59 (4), 893-899, 2012
222012
SCCF—System to component level correlation factor
S Thijs, M Scholz, D Linten, A Griffoni, C Russ, W Stadler, D Lafonteese, ...
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, 1-10, 2010
222010
A statistical approach to microdose induced degradation in FinFET devices
A Griffoni, S Gerardin, PJ Roussel, R Degraeve, G Meneghesso, ...
IEEE Transactions on Nuclear Science 56 (6), 3285-3292, 2009
222009
Microdose and breakdown effects induced by heavy ions on sub 32-nm triple-gate SOI FETs
A Griffoni, S Gerardin, G Meneghesso, A Paccagnella, E Simoen, S Put, ...
IEEE Transactions on Nuclear Science 55 (6), 3182-3188, 2008
202008
Characterization and optimization of sub-32-nm FinFET devices for ESD applications
S Thijs, D Tremouilles, C Russ, A Griffoni, N Collaert, R Rooyackers, ...
IEEE transactions on electron devices 55 (12), 3507-3516, 2008
202008
Off-state degradation of high-voltage-tolerant nLDMOS-SCR ESD devices
A Griffoni, SH Chen, S Thijs, B Kaczer, J Franco, D Linten, ...
IEEE transactions on electron devices 58 (7), 2061-2071, 2011
162011
Advanced ESD power clamp design for SOI FinFET CMOS technology
S Thijs, D Trémouilles, D Linten, NM Iyer, A Griffoni, G Groeseneken
2010 IEEE International Conference on Integrated Circuit Design and …, 2010
152010
Calibration of very fast TLP transients
D Linten, P Roussel, M Scholz, S Thijs, A Griffoni, M Sawada, T Hasebe, ...
2009 31st EOS/ESD Symposium, 1-6, 2009
152009
Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques
A Griffoni, S Gerardin, A Cester, A Paccagnella, E Simoen, C Claeys
IEEE Transactions on Nuclear Science 54 (6), 2257-2263, 2007
152007
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