Dandan Zhu
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Prospects of III-nitride optoelectronics grown on Si
D Zhu, DJ Wallis, CJ Humphreys
Reports on Progress in Physics 76 (10), 106501, 2013
Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates
P Tian, JJD McKendry, Z Gong, S Zhang, S Watson, D Zhu, IM Watson, ...
Journal of Applied Physics 115 (3), 033112, 2014
Structure and chemistry of the Si (111)/AlN interface
G Radtke, M Couillard, GA Botton, D Zhu, CJ Humphreys
Applied Physics Letters 100 (1), 011910, 2012
Scanning transmission electron microscopy investigation of the Si (111)/AlN interface grown by metalorganic vapor phase epitaxy
G Radtke, M Couillard, GA Botton, D Zhu, CJ Humphreys
Applied Physics Letters 97 (25), 251901, 2010
GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE
D Zhu, C McAleese, KK McLaughlin, M Häberlen, CO Salcianu, EJ Thrush, ...
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2009
Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes
AJ Trindade, D Massoubre, B Guilhabert, D Zhu, N Laurand, E Gu, ...
2013 IEEE Photonics Conference, 217-218, 2013
Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates
D Zhu, C McAleese, M Häberlen, C Salcianu, T Thrush, M Kappers, ...
Journal of applied physics 109 (1), 014502, 2011
Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing
AJ Trindade, B Guilhabert, EY Xie, R Ferreira, JJD McKendry, D Zhu, ...
Optics express 23 (7), 9329-9338, 2015
Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates
AJ Trindade, B Guilhabert, D Massoubre, D Zhu, N Laurand, E Gu, ...
Applied Physics Letters 103 (25), 239_1, 2013
Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs
M Meneghini, S Vaccari, N Trivellin, D Zhu, C Humphreys, R Butendheich, ...
IEEE transactions on electron devices 59 (5), 1416-1422, 2012
Compositional inhomogeneity of a high-efficiency based multiple quantum well ultraviolet emitter studied by three dimensional atom probe
MJ Galtrey, RA Oliver, MJ Kappers, C McAleese, D Zhu, CJ Humphreys, ...
Applied Physics Letters 92 (4), 041904, 2008
High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance
PP Maaskant, H Shams, M Akhter, W Henry, MJ Kappers, D Zhu, ...
Applied Physics Express 6 (2), 022102, 2013
Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers
M Haeberlen, D Zhu, C McAleese, MJ Kappers, CJ Humphreys
Journal of Physics: Conference Series 209 (1), 012017, 2010
Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping
JT Griffiths, S Zhang, B Rouet-Leduc, WY Fu, A Bao, D Zhu, DJ Wallis, ...
Nano letters 15 (11), 7639-7643, 2015
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
FCP Massabuau, L Trinh-Xuan, D Lodie, EJ Thrush, D Zhu, F Oehler, ...
Journal of Applied Physics 113 (7), 073505, 2013
InGaN/GaN LEDs grown on Si (111): dependence of device performance on threading dislocation density and emission wavelength
D Zhu, C McAleese, M Häberlen, C Salcianu, T Thrush, M Kappers, ...
physica status solidi c 7 (7‐8), 2168-2170, 2010
Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures
SM de Sousa Pereira, MA Martins, T Trindade, IM Watson, D Zhu, ...
Advanced Materials 20 (5), 1038-1043, 2008
Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer therein
C Humphreys, C Mcaleese, M Kappers, Z Liu, D Zhu
US Patent 9,142,723, 2015
Dislocation-related trap levels in nitride-based light emitting diodes
G Venturi, A Castaldini, A Cavallini, M Meneghini, E Zanoni, D Zhu, ...
Applied Physics Letters 104 (21), 211102, 2014
Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps
DJ Wallis, D Zhu, F Oehler, SP Westwater, A Pujol, CJ Humphreys
Semiconductor science and technology 28 (9), 094006, 2013
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