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Emma M. Findlay
Emma M. Findlay
University of Cambridge
Verified email at cam.ac.uk
Title
Cited by
Cited by
Year
Reverse-conducting insulated gate bipolar transistor: A review of current technologies
EM Findlay, F Udrea
IEEE Transactions on Electron Devices 66 (1), 219-231, 2018
392018
Investigation of the dual implant reverse-conducting superjunction insulated-gate bipolar transistor
EM Findlay, F Udrea, M Antoniou
IEEE Electron Device Letters 40 (6), 862-865, 2019
102019
Coordinated switching with SiC MOSFET for increasing turn-off dv/dt of Si IGBT
P Palmer, X Zhang, J Zhang, E Findlay, T Zhang, E Shelton
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 3517-3521, 2018
52018
Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic CGD Hysteresis for Hard-Switching Superjunction MOSFETs
H Kang, EM Findlay, F Udrea
IEEE Transactions on Electron Devices 67 (6), 2478-2481, 2020
42020
High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures
EM Findlay
University of Cambridge, 2020
32020
Modeling of large area trench IGBTs: The effect of birds-beak
EM Findlay, F Udrea
IEEE Transactions on Electron Devices 66 (6), 2686-2691, 2019
22019
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