Giovanni Isella
Giovanni Isella
Verified email at polimi.it
TitleCited byYear
Analysis of enhanced light emission from highly strained germanium microbridges
MJ Süess, R Geiger, RA Minamisawa, G Schiefler, J Frigerio, D Chrastina, ...
Nature Photonics 7 (6), 466, 2013
3232013
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
G Isella, D Chrastina, B Rössner, T Hackbarth, HJ Herzog, U König, ...
Solid-State Electronics 48 (8), 1317-1323, 2004
1652004
Integrated germanium optical interconnects on silicon substrates
P Chaisakul, D Marris-Morini, J Frigerio, D Chrastina, MS Rouifed, ...
Nature Photonics 8 (6), 482, 2014
1512014
Scaling hetero-epitaxy from layers to three-dimensional crystals
CV Falub, H von Känel, F Isa, R Bergamaschini, A Marzegalli, ...
Science 335 (6074), 1330-1334, 2012
1472012
Midinfrared plasmon-enhanced spectroscopy with germanium antennas on silicon substrates
L Baldassarre, E Sakat, J Frigerio, A Samarelli, K Gallacher, E Calandrini, ...
Nano letters 15 (11), 7225-7231, 2015
1312015
23 GHz Ge/SiGe multiple quantum well electro-absorption modulator
P Chaisakul, D Marris-Morini, MS Rouifed, G Isella, D Chrastina, ...
Optics express 20 (3), 3219-3224, 2012
1122012
Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition
H Känel, M Kummer, G Isella, E Müller, T Hackbarth
Applied physics letters 80 (16), 2922-2924, 2002
962002
Optical spin injection and spin lifetime in Ge heterostructures
F Pezzoli, F Bottegoni, D Trivedi, F Ciccacci, A Giorgioni, P Li, S Cecchi, ...
Physical review letters 108 (15), 156603, 2012
932012
Scattering mechanisms in high-mobility strained Ge channels
B Rössner, D Chrastina, G Isella, H Von Känel
Applied Physics Letters 84 (16), 3058-3060, 2004
902004
Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain
L Carroll, P Friedli, S Neuenschwander, H Sigg, S Cecchi, F Isa, ...
Physical review letters 109 (5), 057402, 2012
872012
Ultralow dark current Ge/Si (100) photodiodes with low thermal budget
J Osmond, G Isella, D Chrastina, R Kaufmann, M Acciarri, H Von Känel
Applied physics letters 94 (20), 201106, 2009
852009
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
M Bonfanti, E Grilli, M Guzzi, M Virgilio, G Grosso, D Chrastina, G Isella, ...
Physical Review B 78 (4), 041407, 2008
812008
Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion
C Lange, NS Köster, S Chatterjee, H Sigg, D Chrastina, G Isella, ...
Physical Review B 79 (20), 201306, 2009
802009
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures
F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ...
Materials science in semiconductor processing 11 (5-6), 279-284, 2008
772008
Phonon strain shift coefficients in alloys
F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ...
Journal of applied physics 103 (9), 093521, 2008
712008
Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures
P Chaisakul, D Marris-Morini, G Isella, D Chrastina, X Le Roux, E Gatti, ...
Optics letters 35 (17), 2913-2915, 2010
692010
Excess carrier lifetimes in Ge layers on Si
R Geiger, J Frigerio, MJ Süess, D Chrastina, G Isella, R Spolenak, J Faist, ...
Applied Physics Letters 104 (6), 062106, 2014
672014
Investigating the lateral motion of SiGe islands by selective chemical etching
G Katsaros, A Rastelli, M Stoffel, G Isella, H Von Känel, AM Bittner, ...
Surface science 600 (12), 2608-2613, 2006
642006
Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells
R Ginige, B Corbett, M Modreanu, C Barrett, J Hilgarth, G Isella, ...
Semiconductor science and technology 21 (6), 775, 2006
572006
The thermoelectric properties of Ge/SiGe modulation doped superlattices
A Samarelli, L Ferre Llin, S Cecchi, J Frigerio, T Etzelstorfer, E Müller, ...
Journal of applied physics 113 (23), 233704, 2013
552013
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